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Influence of starin compensation in InAlAs/InGaAs pseudomorphic HEMTs on InP

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Influence of starin compensation in InAlAs/InGaAs pseudomorphic HEMTs on InP

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High voltage metal oxide thin film transistors to drive arrays of dielectric elastomer actuators

High-Voltage and Low-Leakage AlGaN/GaN Tri-Anode Schottky Diodes With Integrated Tri-Gate Transistors

Leakage mechanisms and contact technologies in InAlN/GaN high electron mobility transistors

Band offsets of lattice-matched semiconductor heterojunctions through hybrid functionals and G(0)W(0)

Direct correlation of crystal structure and optical properties in wurtzite/zinc-blende GaAs nanowire heterostructures

Large-Stroke Dielectric Elastomer Actuators With Ion- Implanted Electrodes

Experimental study of electrical breakdown in MEMS devices with micrometer scale gaps

Semiconductor device for measuring ultra small electrical currents and small voltages

Experimental study of electrical breakdown in MEMS devices with micrometer scale gaps

AlInN/GaN a suitable HEMT device for extremely high power high frequency applications

High voltage metal oxide thin film transistors to drive arrays of dielectric elastomer actuators

Direct correlation of crystal structure and optical properties in wurtzite/zinc-blende GaAs nanowire heterostructures

Leakage mechanisms and contact technologies in InAlN/GaN high electron mobility transistors

Semiconductor device for measuring ultra small electrical currents and small voltages

Band offsets of lattice-matched semiconductor heterojunctions through hybrid functionals and G(0)W(0)

High-Voltage and Low-Leakage AlGaN/GaN Tri-Anode Schottky Diodes With Integrated Tri-Gate Transistors

Experimental study of electrical breakdown in MEMS devices with micrometer scale gaps

Large-Stroke Dielectric Elastomer Actuators With Ion- Implanted Electrodes

AlInN/GaN a suitable HEMT device for extremely high power high frequency applications

Experimental study of electrical breakdown in MEMS devices with micrometer scale gaps