A comparative experimental investigation on responsivity and response speed of photo-diode and photo-BJT structures integrated in a low-cost standard CMOS process
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Today's world of electronics becomes more and more digital and therefore CMOS becomes the dominant technology. A CMOS process compared to a bipolar process offers several advantages, mainly a low power consumption which is important for portable systems po ...
Gallium Nitride (GaN) and its ternary alloys with aluminium and indium have met a growing interest in the last decade. These semiconductors have a large direct bandgap and can be doped with either silicon (Si) for n-type and magnesium (Mg) for p-type layer ...
This thesis deals with the monolithic integration of long wavelength (1.3-1.55 µm) p-i-n photodiodes with HEMT field effect transistors for the realization of wide bandwidth OEIC receivers for lightwave communication systems. Part of this work was carried ...
The first part of this thesis describes the development of an optimised LSO/LuYAP phoswich detector head for the ClearPET demonstrator positron emission tomograph (PET) dedicated to small animals that is under construction in Lausanne within the Crystal Cl ...
A solid-state imager fabricated in CMOS technology is presented for depth information capture of arbitrary 3D objects with millimeter resolution. The system is based on an array of 32x32 pixels that independently measure the time-of-flight of a ray of ligh ...
We present a study on the dependence of the external Quantum Efficiency (QE) of Light Emitting Diodes (LEDs) on the device properties and p-contact metallisation. The external QE could be doubled by changing the p-type contact from oxidised Ni/Au to non-an ...
The design and characterization of an imaging system is presented for depth information capture of arbitrary three-dimensional (3-D) objects. The core of the system is an array of 32 × 32 rangefinding pixels that independently measure the time-of-flight of ...
An avalanche photodiode array uses single-photon counting to perform time-of-flight range-finding on a scene uniformly hit by 100ps 250mW uncollimated laser pulses. The 32x32 pixel sensor, fabricated in a 0.8μm CMOS process uses a microscanner package to e ...
Preliminary radiation tests of hydrogenated amorphous silicon n-i-p photodiodes deposited on a coated glass substrate are presented in this paper. These tests have been performed using a 24 GeV proton beam. We report results on the fluence dependence of th ...