Publication
Preliminary radiation tests of hydrogenated amorphous silicon n-i-p photodiodes deposited on a coated glass substrate are presented in this paper. These tests have been performed using a 24 GeV proton beam. We report results on the fluence dependence of the diode dark current and of the signal induced by a proton spill. © 2005 Published by Elsevier B.V.
Ambrogio Fasoli, Elena Buratin, Vincent Baglin