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Semiconductor quantum dots are usually compared to artificial atoms, because their electronic structure consists of discrete energy levels as for natural atoms. These artificial systems are integrated in solid materials and can be localized with a spatial ...
We show a double path mechanism for the formation of charged excitons (trions); they are formed through bi- and trimolecular processes. This directly implies that both negatively and positively charged excitons coexist in a quantum well, even in the absenc ...
A well-defined silica-based material with a homogeneous nanolayer presenting identical pairs of vicinal silanols has been prepared by reaction of the surface organometallic species[ SiOZr(CH2CMe3)(3)], obtained on a silica dehydroxylated at 900 degrees C, ...
A large number of characterization tools for semiconductor based heterostructures are available nowadays. Most of these techniques deliver high temporal resolution (down to hundreds of femtoseconds) or good spatial resolution (down to sub nanometer resolut ...
Semiconductor nanowires offer a wide range of opportunities for newgenerations of nanoscale electronic and optic devices. For these applications to become reality, deeper understanding of the fundamental properties of the nanowires is required. In this the ...
GaN-based heterostructures, and here, particularly, the lattice matched InAlN/GaN configuration, possess high chemical and thermal stability. Concentrating on refractory metal contact schemes, HEMT devices have been fabricated allowing high-temperature 1-M ...
Diluted magnetic semiconductors (DMS), semiconductors in which a fraction of non-magnetic sites have been replaced with their magnetic counterparts, have been in the limelight of the scientific community since the turn of the 21st century. The interest in ...
Using a differential transmission pump-probe experiment in heterodyne detection, the ultrafast gain and refractive-index dynamics of the ground-state transition in InAs/GaAs quantum-dot amplifiers emitting near 1.3 mu m at working condition, that is at roo ...
The photoluminescence (PL) from GaN quantum dots (QDs) embedded in AlN has been investigated under hydrostatic pressure. The measured pressure coefficient of emitted light energy [dE(E)/dP] shows a negative value, in contrast with the positive pressure coe ...
For more than fifteen years, III-nitrides have become the materials of choice for the realization of optoelectronics devices operating in the visible-UV spectral range. Yet, while nitride-based technology has truly exploded, the structural quality of this ...
