Quantification of roughness and spatial distribution of dislocations in MBE and MOVPE grown LED heterostructures
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We demonstrated that polycrystalline cesium iodide (CsI) on large area Ni/Au coated printed board provides a quantum efficiency (QE) higher by a factor of 2 than the films deposited on the standard Cu/Au printed circuits. This is the most important result ...
An amperometric microsensor for the detection of trace metals in the low or sub nanomolar range is presented. It is obtained by successively evaporating iridium (2000 Å) and Si3N4 (2000 Å) on a silicon wafer, followed by a photolithographic pattering proce ...
We have investigated the optical and structural properties of tensile-strained GaxIn1-xP/InP heterojunctions by cathodoluminescence (CL) in the scanning electron microscope and by transmission electron microscopy (TEM). The lattice mismatch of the samples ...
GaAs/AlxGa1-xAs multiple-quantum-well (MQW) structures with identical well thicknesses but with different Al contents x in the barrier (x almost-equal-to 0.1, 0.2, 0.45, and 1) were grown by molecular-beam epitaxy to study the impurity-induced disordering ...
Piezoelectric coatings of PbZrxTi1-xO3 (PZT) were deposited on standard telecommunication fibers. The PZT coatings were produced by reactive de magnetron sputtering of metal targets in pure oxygen atmosphere. The deposition was carried out at substrate tem ...
We explored degradation in electron-beam-pumped Zn1-xCdxSe/ZnSe laser structures by combining cathodoluminescence (CL) measurements in a scanning electron microscope with transmission electron microscopy. The rate of degradation, measured as the decrease o ...
We report transmission electron microscopy studies of native extended defects in pseudomorphic ZnSe/GaAs (001) and lattice-matched ZnSe-In0.04Ga0.96As (001) heterostructures. The dominant defects present in the layers were identified as Shockley stacking f ...
A review of experimental results obtained by different techniques is presented on the problem of zinc diffusion. Zinc diffusion was carried out on Si-doped GaAs (n almost-equal-to 10(18) cm-3) and on multiple quantum well (MQW) structures. The samples were ...
We discuss the statistical properties of polaritons in quantum wells embedded in a microcavity. In particular we evaluate the amount of squeezing of confined exciton polaritons in a GaAs quantum well. The limit of a large cavity is also considered. ...
We report on the epitaxial growth of high quality GaN films on Si(111) substrates by molecular beam epitaxy using ammonia. The surface morphology and crystallinity of thick undoped GaN films are characterized by reflection high-energy electron diffraction ...