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Unified rule based correction for corners in proximity lithography mask using high resolution features

Publications associées (56)

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Reusable support for additive manufacturing

Additive manufacturing (AM) processes such as material extrusion and vat photopolymerization all require supports to print parts with overhang features. These additional supports using the same or different materials are a waste of materials since they nee ...

2021

Computational rule-based approach for corner correction of non-Manhattan geometries in mask aligner photolithography

Toralf Scharf, Wilfried Noell, Chen Yan, Raoul Kirner, Andreas Vetter

In proximity mask aligner photolithography, diffraction of light at the mask pattern is the predominant source for image shape distortions such as line end shortening and corner rounding. One established method to mitigate the impact of diffraction is opti ...

2019

On Advanced Large-Field Photolithography

Raoul Kirner

The information age we live in today relies on highly integrated devices. They are fabricated with the help of photolithography, the patterning technique at the heart of their production. With the continuous demand for higher integration density to achieve ...

EPFL2019

Spatial coherence properties of an LED-based illumination system for mask-aligner lithography

Hans Peter Herzig, Toralf Scharf, Wilfried Noell, Raoul Kirner, Johana Bernasconi

A high-power LED-based illumination system has been developed as a replacement for the mercury arc lamps used in mask-aligner lithography. LEDs are arranged in a grid array and placed in the entrance aperture of individual reflectors. Those reflectors decr ...

SPIE2019

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Single-photon avalanche diodes (SPADs) are direct photon-to-digital detectors that enable scalable arrays with Poisson-limited signal-to-noise ratio and picosecond timing resolution. However, SPAD detectors require a guard-ring structure to prevent lateral ...

2019

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A continuous improvement of resolution in mask-aligner lithography is sought after to meet the requirements of an ever decreasing minimum feature size in back-end processes. For periodic structures, utilizing the Talbot effect for lithography has emerged a ...

2018

Improving the resolution in mask-aligner lithography

Toralf Scharf, Wilfried Noell, Raoul Kirner, Andreas Vetter

For the back-end microfabrication in integrated circuits and for the manufacturing of light emitting diodes, proximity mask-aligner lithography is still the tool of choice, due to its simplicity and low costs. However, the downscaling of functional element ...

IEEE2018

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Mask-aligner lithography is a technology used to transfer patterns with critical dimensions in the micrometer range from below 1 micron for contact printing to a dozen of microns in proximity printing. This technology is widely used in the fabrication of M ...

2018

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Mask-aligner lithography is traditionally performed using mercury arc lamps with wavelengths ranging from 250 nm to 600 nm with intensity peaks at the i, g and h lines. Since mercury arc lamps present several disadvantages, it is of interest to replace the ...

2018

Enabling proximity mask-aligner lithography with a 193nm CW light source

Toralf Scharf, Wilfried Noell, Raoul Kirner, Andreas Vetter

We introduce a novel industrial grade 193nm continuous-wave laser light source for proximity mask-aligner lithography. A diode seed laser in master-oscillator power-ampliﬁcation conﬁguraton is frequency-quadrupled using lithiumtriborate and potassium-ﬂuoro ...

2018