Capacitor-less memory and abrupt switch based on hysteresis characteristics in punch-through impact ionization mos transistor (PI-MOS)

Mihai Adrian Ionescu, Maher Kayal, Kirsten Emilie Moselund, Vincent Pott
2009
Brevet

Résumé

The present invention exploits the impact ionization induced by drain voltage increase and the onset of a bipolar parasitic in an Omega-gate field effect metal oxide insulator transistor (called PI-MOS), in order to obtain a memory effect and abrupt current switching.

Source officielle

https://infoscience.epfl.ch/record/229029?ln=fr

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Capacitor-less memory and abrupt switch based on hysteresis characteristics in punch-through impact ionization mos transistor (PI-MOS)

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