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Semiconductor device

Publications associées (58)

Bismuth Vanadate as a Platform for Accelerating Discovery and Development of Complex Transition-Metal Oxide Photoanodes

Development of practical systems for photoelectrochem. conversion of solar energy to chem. fuel requires light absorbers that are efficient, durable, and scalable. Because no material currently meets all three requirements, intensive semiconductor discover ...

Amer Chemical Soc2017

Far-from-equilibrium transport of excited carriers in nanostructures

Giulia Tagliabue

Transport of charged carriers in regimes of strong non-equilibrium is critical in a wide array of applications ranging from solar energy conversion and semiconductor devices to quantum information. Plasmonic hot-carrier science brings this regime of transp ...

2017

Band structure engineering in organic semiconductors

Wolfgang Richard Tress, Feng Gao, Beatrice Beyer

A key breakthrough in modern electronics was the introduction of band structure engineering, the design of almost arbitrary electronic potential structures by alloying different semiconductors to continuously tune the band gap and band-edge energies. Imple ...

American Association for the Advancement of Science2016

Multidimensional coherent optical spectroscopy of semiconductor nanostructures: a review

Gaël Nardin

Multidimensional coherent optical spectroscopy (MDCS) is an elegant and versatile tool to measure the ultrafast nonlinear optical response of materials. Of particular interest for semiconductor nanostructures, MDCS enables the separation of homogeneous and ...

Institute of Physics2016

Charge-transport properties of monolayer MoS2 at the interface with dielectric materials

Simone Bertolazzi

Two-dimensional (2D) semiconductors, consisting of single-sheets of layered transition metal dichalcogenides (TMD), are attracting enormous interest from both fundamental science and technology. Monolayer molybdenum disulfide (MoS2), a typical example from ...

EPFL2015

Polarization charge as a reconfigurable quasi-dopant in ferroelectric thin films

Nava Setter, Alexander Tagantsev, Tomas Sluka, Arnaud Robert André Crassous

Impurity elements used as dopants are essential to semiconductor technology for controlling the concentration of charge carriers. Their location in the semiconductor crystal is determined during the fabrication process and remains fixed. However, another p ...

Nature Publishing Group2015

Electron and Hole Mobilities in Single-Layer WSe2

Andras Kis, Adrien Victor Allain

Single-layer transition metal dichalcogenide WSe2 has recently attracted a lot of attention because it is a 2D semiconductor with a direct band gap. Due to low doping levels, it is intrinsic and shows ambipolar transport. This opens up the possibility to r ...

Amer Chemical Soc2014

Calculation of the Energy Band Diagram of a Photoelectrochemical Water Splitting Cell

Michael Graetzel, Stanley David Tilley, Matthias Schmid

A physical model is presented for the semiconductor electrode of a photoelectrochemical cell. The model accounts for the potential drop in the Helmholtz layer and thus enables description of both band edge pinning and unpinning. The model is based on the c ...

American Chemical Society2014

Bi2Te3-xSex series studied by resistivity and thermopower

László Forró, Ana Akrap

We study the detailed temperature and composition dependence of the resistivity, rho(T), and thermopower, S(T), for a series of layered bismuth chalcogenides Bi2Te3-xSex, and report the stoichiometry dependence of the optical band gap. In the resistivity o ...

Epl Association, European Physical Society2014

Light Generation and Harvesting in a van der Waals Heterostructure

Aleksandra Radenovic, Andras Kis, Esther Alarcon Llado, Oriol López Sánchez, Volodymyr Koman

Two-dimensional (2D) materials are a new type of materials under intense study because of their interesting physical properties and wide range of potential applications from nanoelectronics to sensing and photonics. Monolayers of semiconducting transition ...

Amer Chemical Soc2014

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