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Traditional metal-oxide-semiconductor field effect transistor scaling has advanced successfully over 50 years providing significant increases in transistor count per chip and operating frequency, thus enabled the built of ever more performant and complex s ...
This thesis explores the electronic properties of one layered transition-metal dichalcogenide – single-layer MoS2, and demonstrates the first transistors and integrated circuits with characteristics that outperform graphene electronics in many aspects and ...
A Ferroelectric tunnel FET switch as ultra-steep (abrupt) switch with subthreshold swing better than the MOSFET limit of 60 mV/decade at room temperature combining two key principles: ferroelectric gate stack and band-to-band tunneling in gated p-i-n junct ...
Semiconductor nanowires are an emerging class of materials with great potential for applications in future electronic devices. The small footprint and the large charge-carrier mobilities of nanowires make them potentially useful for applications with high- ...
Over the recent decades, the balance between increasing the complexity of computer chips and simultaneously reducing cost per bit has been accommodated by down-scaling. While extremely successful in the past, this approach now faces grave limitations leadi ...
This thesis aims at the site-specific realization of self-assembled field-effect transistors (FETs) based on semiconducting Zinc oxide NWs and their application towards chemical and bio-sensing in liquid medium. At first, a solution based growth method for ...
The increase of components density in advanced microelectronics is practically dictated by the device size and the achievable pitch between the devices. Scaling down dimensions of devices and progress in the circuit design allowed following Moore's law dur ...
The present paper focuses on evaluating the temperature effects on Hall Effect sensors sensitivity behavior. To this purpose, an analysis of the factors affecting the sensors current-related sensitivity is performed, consisting of several pertinent conside ...
A multiphonon-assisted model included in a Poisson-Schroedinger solver has been applied to the calculation of the capture/emission trapping rates of CMOS oxide interface defects. The dependencies of trap capture cross-sections with trap energy, depth, appl ...
This paper presents a novel physics-based analytical compact model for the drift region of a high-voltage metal-oxide-semiconductor field-effect transistor (HV-MOSFET). According to this model, the drift region is considered as a simple 1-D problem, just a ...
