Memristive Biosensors based on Full-size Antibodies and Antibody Fragments
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A method for preparing and observing clay platelets for size and shape analysis using scanning electron microscopy (SEM) was developed. Samples of the clay platelets were prepared by polyelectrolyte-assisted adsorption onto a pyrolytic graphite surface. Th ...
A novel C-Nafton/Fe-ion structured fabric capable of mediating Orange II decomposition in Fenton-immobilized photoassisted reactions is presented. The catalyst preparation requires the right balance between the amount of the Nafion necessary to protect the ...
Pb1-xCaxTiO3 thin films with x = 0-0.3 for pyroelectric applications were deposited on platinized silicon wafers by chemical solution processing. Ca-substitution for Pb in PbTio(3) results in a reduced cia ratio of the unit cell, which, in turn, leads to b ...
We explored degradation in electron-beam-pumped Zn1-xCdxSe/ZnSe laser structures by combining cathodoluminescence (CL) measurements in a scanning electron microscope with transmission electron microscopy. The rate of degradation, measured as the decrease o ...
We explored the degradation in electron beam pumped Zn1-xCdxSe/ZnSe laser structures by combining cathodoluminescence measurements in a scanning electron microscope with transmission electron microscopy. We found that degradation occurred via the formation ...
We present results obtained both with scanning electron microscopy (SEM) in the cathodoluminescence (CL) mode and transmission electron microscopy (TEM) on ZnCdSe/ZnSe electron-beam-pumped laser structures. This investigation aims at establishing a relatio ...
The role of the Hox gene Hoxd-13 in postnatal morphogenesis of the male accessory sex organs was examined by correlating the distribution and temporal regulation of expression in the accessory sex organs of postnatal mice with morphologic abnormalities of ...
The characterization of sub-micron gratings is usually performed on scanning electron microscopes, although the dimensions of the features often make the observations difficult. We report here on a new method applicable to III-V and II-VI semiconductors: w ...