Publication
Growth and Composition of Atomic Layer Deposited Titanium Oxide Films for c-Si Solar Cell Applications
Publications associées (41)
III-V Nitride Semiconductors Deposited At Low Temperature For Photovoltaic Applications
This thesis reports on the study and use of low temperature processes for the deposition of indium gallium nitride (InGaN) thin films in order to alleviate some of the present drawbacks of its monolitic deposition on silicon for photovoltaic applications. ...
EPFL2023Material Development for Perovskite/Silicon Tandem Photovoltaics
The developed world is built on the fact that energy is readily available and functionally infinite. The electricity from the wall, the gas at the station, and the heat in our homes are reliable and low-cost. But this comfort is so far only possible throug ...
EPFL2022Structure, Oxygen Content and Electric Properties of Titanium Nitride Electrodes in TiNx/La:HfO2/TiNx Stacks Grown by PEALD on SiO2/Si
Philippe Buffat, Elena Suvorova Buffat
This work reports experimental results of the quantitative determination of oxygen and band gap measurement in the TiNx electrodes in planar TiNx top/La:HfO2/TiNx bottom MIM stacks obtained by plasma enhanced atomic layer deposition on SiO2. Methodological ...
2022Towards Single Photon Detection with Amorphous Silicon Based Microchannel Plates
Janina Christine Isabelle Löffler
An exciting new approach for microchannel plate (MCP) detectors could help make them suitable for single photon detection. State-of-the-art clean room technology allows amorphous silicon based microchannel plates (AMCPs) to take a variety of shapes. This v ...
EPFL2021Comparison of amorphous silicon absorber materials: Kinetics of light-induced degradation
Christophe Ballif, Franz-Josef Haug, Matthieu Despeisse, Mathieu Gérard Boccard, Michael Elias Stückelberger, Yannick Samuel Riesen, Adrian Billet
We investigate the influence of the deposition parameters for intrinsic amorphous silicon absorber layers on light-induced degradation (LID) of thin-film silicon solar cells. The focus is on absorber layers with different bandgaps: on one side, solar cells ...
Wiley-Blackwell2016Temperature dependence of hydrogenated amorphous silicon solar cell performances
Christophe Ballif, Franz-Josef Haug, Michael Elias Stückelberger, Yannick Samuel Riesen
Thin-film hydrogenated amorphous silicon solar (a-Si:H) cells are known to have better temperature coefficients than crystalline silicon cells. To investigate whether a-Si:H cells that are optimized for standard conditions (STC) also have the highest energ ...
American Institute of Physics2016Explaining Morphological and Electrical Features of Boron-doped Zinc Oxide to Tailor New Electrodes for Photovoltaics
TCOs are a class of metal oxides that combine transparency to visible light with electrical conductivity. Each TCO is characterized by the trade-off of these two properties which can be tuned for a particular application. This thesis is dedicated to the in ...
EPFL2016Strategies for Doped Nanocrystalline Silicon Integration in Silicon Heterojunction Solar Cells
Christophe Ballif, Aïcha Hessler-Wyser, Antoine Descoeudres, Jonas Geissbühler, Stefaan De Wolf, Gizem Nogay, Martial Duchamp, Johannes Peter Seif, Simon Hänni, Martin Ledinsky, Niels Holm
Carrier collection in silicon heterojunction (SHJ) solar cells is usually achieved by doped amorphous silicon layers of a few nanometers, deposited at opposite sides of the crystalline silicon wafer. These layers are often defect-rich, resulting in modest ...
Ieee-Inst Electrical Electronics Engineers Inc2016The boron-tailing myth in hydrogenated amorphous silicon solar cells
Christophe Ballif, Franz-Josef Haug, Matthieu Despeisse, Grégory Bugnon, Michael Elias Stückelberger
The boron-tailing effect in hydrogenated amorphous silicon (a-Si:H) solar cells describes the reduced charge collection specifically in the blue part of the spectrum for absorber layers deposited above a critical temperature. This effect limits the device ...
American Institute of Physics2015Amorphous silicon enhanced metal-insulator-semiconductor contacts for silicon solar cells
Aïcha Hessler-Wyser, Stefaan De Wolf, Bénédicte Demaurex
Carrier recombination at the metal-semiconductor contacts has become a significant obstacle to the further advancement of high-efficiency diffused-junction silicon solar cells. This paper provides the proof-of-concept of a procedure to reduce contact recom ...
American Institute of Physics2014