Annealing of Silicon Heterojunction Solar Cells: Interplay of Solar Cell and Indium Tin Oxide Properties
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AIP2020
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EPFL2021
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In this contribution, we present an electron selective passivating contact metallised with a low temperature process to target front side applications in crystalline silicon (c-Si) solar cells. In addition to an interfacial silicon oxide (SiOx) and an in-s ...
2020
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AMER INST PHYSICS2019
Passivation, conductivity, and selectivity are often acknowledged as the three requirements for optimal contacts to photovoltaic solar cells. Although there are generally accepted definitions and metrics for passivation and conductivity, a common understan ...
2019
In silicon heterojunction solar cells made with high-lifetime wafers, resistive losses in the contacts dominate the total electrical power loss. Moreover, it is widely believed that the hole contact stack—a-Si:H(i)/a-Si:H(p)/ITO/Ag—is responsible for more ...
2019
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Herein, the optoelectronic properties of interface-engineered perovskite 2D|3D-heterojunction structure solar cells are reported. The reciprocity theorem is applied to determine the maximum open-circuit voltage (V-oc) the device can deliver under solar ill ...
Transparent conductive oxides (TCOs) are essential in technologies coupling light and electricity. Due to their good optoelectronic properties and the production scalability, Sn-doped indium oxide (In2O3:Sn) is the preferred TCO in industrial applications. ...
We investigate the contact resistivity of p-type passivating contacts for silicon solar cells. Our contact structures are compatible with firing, a rapid annealing process similar to the one used for sintering of the screen-printed metallisation in solar c ...