Ultrafast carrier dynamics in III-nitride nanostructures and LED quantum efficiency
Graph Chatbot
Chattez avec Graph Search
Posez n’importe quelle question sur les cours, conférences, exercices, recherches, actualités, etc. de l’EPFL ou essayez les exemples de questions ci-dessous.
AVERTISSEMENT : Le chatbot Graph n'est pas programmé pour fournir des réponses explicites ou catégoriques à vos questions. Il transforme plutôt vos questions en demandes API qui sont distribuées aux différents services informatiques officiellement administrés par l'EPFL. Son but est uniquement de collecter et de recommander des références pertinentes à des contenus que vous pouvez explorer pour vous aider à répondre à vos questions.
Recombination dynamics in InGaN/GaN quantum wells has been studied by time resolved photoluminescence (PL). The radiative recombination processes in these systems can be qualitatively explained on a nanometer-scale by a model based on the recombination dyn ...
We present a combined theoretical and experimental analysis to describe the interplay between polarization field, charge screening, and radiative and nonradiative recombinations in AlGaN/ GaN-based nanostructures. We perform the study of photoluminescence ...
We have found experimentally that the exciton oscillator strength decreases dramatically with increase of the QW width in a GaN/Al0.07Ga0.93N system. The collapse of the oscillator strength is a manifestation of the polarisation field effect, as confirmed ...
Nucleation and growth of Pd on cleaved MgO(001) surfaces were studied by variable-temperature atomic force microscopy in the temperature range 200-800 K. Constant island densities (similar to 3x10(12)cm(-2)) were observed over a wide temperature range, ind ...
We present an experimental study of the dynamical screening effect of the built-in field in GaN-based quantum well structures by means of picosecond time-resolved luminescence measurements. Our results clearly show that the recombination dynamics of the ph ...
The emission properties of self-assembled InAs quantum dots (QDs) and lattice-matched GaInNAs quantum wells (QWs) emitting around 1.3 mum were investigated by temperature-dependent and time-resolved photoluminescence (PL). The QDs have much higher PL effic ...
We compare several InGaN-based low-dimensional systems, by time-resolved photoluminescence (PL), versus temperature (8 < T < 280 K). We investigate the influence of growing or not an AlGaN barrier on top of the active layer. We address the differences betw ...
We report the optical properties of high quality V-groove GaAs/Al0.3Ga0.7.As quantum wires (QWRs) with different thicknesses of the GaAs layer. The systematic investigation of photoluminescence (PL) and photoluminescence excitation (PLE) spectra as a funct ...
We present an experimental study of the exciton and phonon replica dynamics in high quality GaN epilayers and AlGaN/GaN quantum wells (QW) by means of picosecond time-resolved photoluminescence (PL) measurements. A non-exponential decay is observed both at ...
We study the dynamics of the charged and neutral excitons in a modulation-doped GaAs quantum well by time-resolved photoluminescence under a resonant excitation. The radiative lifetime of the charged exciton is found to be surprisingly short, 60 ps. This t ...
