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Effects of InAlN underlayer on deep traps detected in near-UV InGaN/GaN single quantum well light-emitting diodes

Publications associées (36)

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Progress in Violet Light-Emitting Diodes Based on ZnO/GaN Heterojunction

Eric Feltin, Mauro Mosca

Progress in light-emitting diodes (LEDs) based on ZnO/GaN heterojunctions has run into several obstacles during the last twenty years. While both the energy bandgap and lattice parameter of the two semiconductors are favorable to the development of such de ...

MDPI2020

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Lead halide perovskites exhibit great potential for light-emitting devices. Enhanced photoluminescence (PL) is obtained in perovskite materials of reduced dimensionalities due to the large exciton binding energy. However, as the nanocrystal size is reduced ...

2020

Fluorination of Organic Spacer Impacts on the Structural and Optical Response of 2D Perovskites

Mohammad Khaja Nazeeruddin, Giulia Grancini, Valentin Ianis Emmanuel Queloz, Inés Garcia Benito, Pietro Caprioglio

Low-dimensional hybrid perovskites have triggered significant research interest due to their intrinsically tunable optoelectronic properties and technologically relevant material stability. In particular, the role of the organic spacer on the inherent stru ...

2020

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The electrical properties and deep trap spectra were compared for near-UV GaN/InGaN quantum well (QW) structures grown on free-standing GaN substrates. The structures differed by the presence or absence of a thin (110 nm) InGaN layer inserted between the h ...

ELSEVIER SCIENCE SA2020

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We study the impact of non-radiative defects on Auger recombination in c-plane InGaN/GaN single quantum wells (SQWs) in the efficiency droop regime using high injection time-resolved photoluminescence. The defect density in the SQW is controlled by tuning ...

AMER INST PHYSICS2020

GaN surface as the source of non-radiative defects in InGaN/GaN quantum wells

Nicolas Grandjean, Jean-François Carlin, Raphaël Butté, Denis Martin, Gwénolé Jean Jacopin, Wei Liu, Camille Haller

Blue light-emitting diodes based on III-nitride semiconductors are nowadays widely used for solid-state lighting. They exhibit impressive figures of merit like an internal quantum efficiency close to 100%. This value is intriguing when considering the high ...

AMER INST PHYSICS2018

Burying non-radiative defects in InGaN underlayer to increase InGaN/GaN quantum well efficiency

Nicolas Grandjean, Jean-François Carlin, Raphaël Butté, Denis Martin, Gwénolé Jean Jacopin, Camille Haller

The insertion of an InGaN underlayer (UL) is known to strongly improve the performance of InGaN/GaN quantum well (QW) based blue light emitting diodes (LEDs). However, the actual physical mechanism responsible for it is still unclear. We thus conduct a sys ...

American Institute of Physics2017

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Using a hybrid density-functional scheme, we address the O impurity substitutional to N (O-N) in In0.17Al0.83N. Our modelling supports In clustering to account for the strong band-gap bowing observed in InxAl1-xN alloys. To study the ON defect in In0.17Al0 ...

American Institute of Physics2017

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Interest in delafossite (CuFeO2) as a candidate p-type photocathode for photoelectrochemical (PEC) solar fuel production has recently been increasing, mainly due to its excellent stability in aqueous environments and favorable light absorption properties. ...

American Chemical Society2017

Identification of Semiconductor Defects through Constant-Fermi-Level Ab Initio Molecular Dynamics: Application to GaAs

Alfredo Pasquarello, Assil Bouzid

We show that constant-Fermi-level ab initio molecular dynamics can be used as a computer-based tool to reveal and control relevant defects in semiconductor materials. In this scheme, the Fermi level can be set at any position within the band gap during the ...

Amer Physical Soc2017