Publication

Elucidating the role of the InGaN UL in the efficiency of InGaN based light-emitting diodes

Publications associées (61)

III-N blue-emitting epi-structures with high densities of dislocations: Fundamental mechanisms for efficiency improvement and applications

Pierre Christophe Lottigier

Since the dawn of humanity, human beings seeked to light their surroundings for their well-being, security and development. The efficiency of ancient lighting devices, e.g. oil lamps or candles, was in the order of 0.03-0.04% and jumped to 0.4-0.6% with th ...
EPFL2024

Study of growth-induced point defects and their impact on InGaN-based optoelectronic devices

Yao Chen

GaN exhibits a decomposition tendency for temperatures far below its melting point and common growth temperatures used in metal-organic vapour phase epitaxy (MOVPE).This characteristic is known to be a major obstacle for realising GaN bulk substrate. There ...
EPFL2024

Investigation of room-temperature single-photon emitters in GaN-based materials and GaN/AlN quantum dots

Johann Nicolaï Stachurski

Over the past decade, quantum photonics platforms aiming at harnessing the fundamental properties of single particles, such as quantum superposition and quantum entanglement, have flourished. In this context, single-photon emitters capable of operating at ...
EPFL2024

The mesoglea buffers the physico-chemical microenvironment of photosymbionts in the upside-down jellyfish Cassiopea sp.

Anders Meibom, Niclas Heidelberg Lyndby, Michael Kühl

IntroductionThe jellyfish Cassiopea has a conspicuous lifestyle, positioning itself upside-down on sediments in shallow waters thereby exposing its photosynthetic endosymbionts (Symbiodiniaceae) to light. Several studies have shown how the photosymbionts b ...
FRONTIERS MEDIA SA2023

Deep defects in InGaN LEDs: modeling the impact on the electrical characteristics

Nicolas Grandjean, Jean-François Carlin, Camille Haller

Deep defects have a fundamental role in determining the electro-optical characteristics and in the efficiency of InGaN light-emitting diodes (LEDs). However, modeling their effect on the electrical characteristics of the LED is not straightforward. In this ...
SPIE-INT SOC OPTICAL ENGINEERING2022

Defect incorporation in In-containing layers and quantum wells: experimental analysis via deep level profiling and optical spectroscopy

Nicolas Grandjean, Jean-François Carlin, Mauro Mosca, Camille Haller

Recent studies demonstrated that the performance of InGaN/GaN quantum well (QW) light emitting diodes (LEDs) can be significantly improved through the insertion of an InGaN underlayer (UL). The current working hypothesis is that the presence of the UL redu ...
IOP PUBLISHING LTD2021

Modeling the electrical characteristics of InGaN/GaN LED structures based on experimentally-measured defect characteristics

Nicolas Grandjean, Jean-François Carlin, Camille Haller

Defects can significantly modify the electro-optical characteristics of InGaN light-emitting diodes (LEDs); however, modeling the impact of defects on the electrical characteristics of LEDs is not straightforward. In this paper, we present an extensive inv ...
IOP PUBLISHING LTD2021

Routes for Efficiency Enhancement in Fluorescent TADF Exciplex Host OLEDs Gained from an Electro-Optical Device Model

Beat Ruhstaller, Markus Regnat

Fluorescence-based organic light-emitting diodes (OLEDs) using thermally activated delayed fluorescence (TADF) have increasingly attracted attention in research and industry. One method to implement TADF is based on an emitter layer composed of an exciplex ...
WILEY2020

Progress in Violet Light-Emitting Diodes Based on ZnO/GaN Heterojunction

Eric Feltin, Mauro Mosca

Progress in light-emitting diodes (LEDs) based on ZnO/GaN heterojunctions has run into several obstacles during the last twenty years. While both the energy bandgap and lattice parameter of the two semiconductors are favorable to the development of such de ...
MDPI2020

Highly spatially resolved mapping of the piezoelectric potentials in InGaN quantum well structures by off-axis electron holography

The internal fields in 2.2nm thick InGaN quantum wells in a GaN LED structure have been investigated by using aberration-corrected off-axis electron holography with a spatial resolution of better than 1nm. To improve the spatial resolution, different types ...
2020

Graph Chatbot

Chattez avec Graph Search

Posez n’importe quelle question sur les cours, conférences, exercices, recherches, actualités, etc. de l’EPFL ou essayez les exemples de questions ci-dessous.

AVERTISSEMENT : Le chatbot Graph n'est pas programmé pour fournir des réponses explicites ou catégoriques à vos questions. Il transforme plutôt vos questions en demandes API qui sont distribuées aux différents services informatiques officiellement administrés par l'EPFL. Son but est uniquement de collecter et de recommander des références pertinentes à des contenus que vous pouvez explorer pour vous aider à répondre à vos questions.