Elucidating the role of the InGaN UL in the efficiency of InGaN based light-emitting diodes
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Recent studies demonstrated that the performance of InGaN/GaN quantum well (QW) light emitting diodes (LEDs) can be significantly improved through the insertion of an InGaN underlayer (UL). The current working hypothesis is that the presence of the UL redu ...
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Defects can significantly modify the electro-optical characteristics of InGaN light-emitting diodes (LEDs); however, modeling the impact of defects on the electrical characteristics of LEDs is not straightforward. In this paper, we present an extensive inv ...
Progress in light-emitting diodes (LEDs) based on ZnO/GaN heterojunctions has run into several obstacles during the last twenty years. While both the energy bandgap and lattice parameter of the two semiconductors are favorable to the development of such de ...