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Functionality Enhanced Memories for Edge-AI Embedded Systems

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Transistors are the fundamental elements in Integrated Circuits (IC). The development of transistors significantly improves the circuit performance. Numerous technology innovations have been adopted to maintain the continuous scaling down of transistors. W ...

EPFL2016

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In this study, design considerations for ultra low voltage (ULV) standard-cell based memories (SCM) are presented. Trade-offs for area cost, leakage power, access time, and access energy are discussed and realized using different read logic styles, latch a ...

Institute of Electrical and Electronics Engineers2016

Single field effect transistor capacitor-less memory device and method of operating the same

Mihai Adrian Ionescu, Arnab Biswas, Nilay Dagtekin

A single field effect transistor capacitor-less memory device, and method of operating the same, including a drain region, a source region, an intrinsic channel region between the drain region and the source region forming the single field effect transisto ...

Technology Transfer Office EPFL2016

Towards Functionality-Enhanced Devices: Controlling the Modes of Operation in Three-Independent-Gate Transistors (invited)

Giovanni De Micheli, Pierre-Emmanuel Julien Marc Gaillardon, Jian Zhang, Michele De Marchi

In this paper, we introduce the different modes of operation achievable with Three-Independent-Gate Field-Effect Transistors (TIGFETs) and report results on fabricated devices including: (i) the dynamic reconfiguration of the device polarity; (ii) t ...

2015

Charge-transport properties of monolayer MoS2 at the interface with dielectric materials

Simone Bertolazzi

Two-dimensional (2D) semiconductors, consisting of single-sheets of layered transition metal dichalcogenides (TMD), are attracting enormous interest from both fundamental science and technology. Monolayer molybdenum disulfide (MoS2), a typical example from ...

EPFL2015

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This work demonstrates the first fabricated 4-transistor logic gates using polarity-configurable, gate-all- around silicon nanowire transistors. This technology enhances conventional CMOS functionality by adding the degree of free- dom of dynamic polarity ...

Institute of Electrical and Electronics Engineers2014

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The soaring demand for computing power in our digital information age has produced as collateral undesirable effect a surge in power consumption and heat density for computing servers. Accordingly, 30-40% of the energy consumed in state-of-the-art servers ...

IEEE/ACM Press2014

Nanowire systems: technology and design (invited paper)

Giovanni De Micheli, Davide Sacchetto, Pierre-Emmanuel Julien Marc Gaillardon, Luca Gaetano Amarù, Shashi Kanth Bobba, Michele De Marchi

Nanosystems are large-scale integrated systems exploiting nanoelectronic devices. In this work, we consider double independent gate, vertically-stacked nanowire FETs with gate-all-around structures and typical diameter of 20-nm. These devices, which we hav ...

Royal Soc2014

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Silicon nanowire transistors with Schottky-barrier contacts exhibit both n-type and p-type characteristics under different bias conditions. Polarity controllability of silicon nanowire transistors has been further demonstrated by using an additional polari ...

Institute of Electrical and Electronics Engineers2014

Ambipolar silicon nanowire field effect transistor

Giovanni De Micheli, Davide Sacchetto, Yusuf Leblebici, Michele De Marchi

This invention describes a novel electronic device consisting of one-or more-vertically stacked gate-all-around silicon nanowire field effect transistor (SNWFET) with two independent gate electrodes. One of the two gate electrodes, acting on the central se ...

2013