Functionality Enhanced Memories for Edge-AI Embedded Systems
Publications associées (34)
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This thesis explores the electronic properties of one layered transition-metal dichalcogenide – single-layer MoS2, and demonstrates the first transistors and integrated circuits with characteristics that outperform graphene electronics in many aspects and ...
Interest in PVDF-TrFE copolymers as ferroelectric material for Memory application is driven by the prospect of having low cost, low operating voltage and fully organic device. Some previous studies reported FET designs using copolymers [refs 1,2] but none ...
Silicon technology has advanced at exponential rates both in performances and productivity through the past four decades. However the limit of CMOS technology seems to be closer and closer and in the future we might see an increasing number of hybrid appro ...
EPFL2011
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This work presents different circuit architectures that combine sensing and signal readout functions. The basic building block is a Fin Field-Effect Transistor (Fin-FET) used as both sensor and metal gate transistor. Moreover, a hybrid partially gated FinF ...
Elsevier2013
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By applying various surface treatments to the oxide gate of pentacene transistors, both in vacuum (H2, O2 and Ar plasma treatments) and in aqueous solution, we were able to vary the balance between oxygen-free radicals (Si•), oxygen-centered radicals (Si−O ...
American Chemical Society2010
Over the recent decades, the balance between increasing the complexity of computer chips and simultaneously reducing cost per bit has been accommodated by down-scaling. While extremely successful in the past, this approach now faces grave limitations leadi ...
EPFL2012
Semiconductor nanowires are an emerging class of materials with great potential for applications in future electronic devices. The small footprint and the large charge-carrier mobilities of nanowires make them potentially useful for applications with high- ...
EPFL2011
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This paper reports on the memory and memristive effects of Schottky barrier field effect transistors (SBFET) with gate-all-around (GAA) configuration and Si nanowire (SiNW) channel. Similar behavior has also been investigated for SBFETs with poly-Si nanowi ...
IEEE Service Center, 445 Hoes Lane, Po Box 1331, Piscataway, Nj 08855-1331 Usa2010
In organic thin-film transistors (OTFTs), the conducting channel is located near the interface between the organic semiconductor and the dielectric; this interface is crucial for transistor performance. The goal of this thesis is to study the effect of thi ...
EPFL2010
The aim of this research is to develop and to evaluate devices and circuits performances based on ultrathin nanograin polysilicon wire (polySiNW) dedicated to room temperature operated hybrid CMOS-"nano" integrated circuits. The proposed polySiNW device is ...
