Three-Dimensional Integrated Ultra-Low-Volume Passive Microfluidics with Ion-Sensitive Field-Effect Transistors for Multiparameter Wearable Sweat Analyzers
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Silicon transistor scaling is approaching its end and a transition to novel materials and device concepts is more than ever essential. High-mobility compound semiconductors are considered promising candidates to replace silicon, targeting low-power logic a ...
EPFL2020
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EPFL2016
Conventional device scaling has been the main guiding principle of the MOS device engineering over these past years. However, this aggressive scaling would be eventually limited due to the inability to remove the heat generated by MOSFET devices. The power ...
EPFL2019
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Field-effect transistors (FETs) form an established technology for sensing applications. However, recent advancements and use of high-performance multigate metal-oxide semiconductor FETs (double-gate, FinFET, trigate, gate-all-around) in computing technolo ...
The development of nanotechnologies, and the advent of micro/nano-sensors with novel functionalities integrated on flexible substrates, has opened the way to the development of wearable technology. Interest in wearable technology comes from the considerabl ...
The aim of this work has been the investigation of homo-junction Tunnel Field Effect Transistors starting from a compact modelling perspective to its possible applications. Firstly a TCAD based simulation study is done to explain the main device characteri ...
Methods based on the electron spin resonance (ESR) phenomenon are used to study paramagnetic systems at temperatures that ranges from 1000 to below 1 K. Commercially available spectrometers achieve spin sensitivities in the order of 10^(10) spins/¿Hz at ro ...
This paper reports a compact ambipolar model for homojunction strained-silicon (sSi) nanowire (NW) tunnel FETs (TFETs) capable of accurately describing both I-V and G-V characteristics in all regimes of operation, n- and p-ambipolarity, the superlinear ons ...
Institute of Electrical and Electronics Engineers2017
Ultra-Thin Body and Box (UTBB) Fully-depleted Silicon-on-Insulator (FDSOI) MOSFETs exhibit very high transit frequency granting advantageous RF and low-power circuits design. This requires accurate models describing transistor behavior in all operating reg ...
During the last decades, the usage of silicon photodetectors, both as stand-alone sensor or integrated in arrays, grew tremendously. They are now found in almost any application and any market range, from leisure products to high-end scientific apparatuses ...
