High-Frequency GaN-on-Si power integrated circuits based on Tri-Anode SBDs
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This paper presents an inductive power link for remote powering of a wireless cortical implant. The link includes a Class-E power amplifier, a gate driver, an inductive link, and an integrated rectifier. The coils of the inductive link are designed and opt ...
Institute of Electrical and Electronics Engineers2011
Nowadays, the scarcity of cheap energy sources requires a particular effort in optimizing the performance of all conversions. The electric power vector is particulary expected to grow in importance, in conjunction with the development of renewable energy s ...
Medium voltage high-power applications are usually realized using high voltage semiconductors (3.3 kV and above) operated in the hard switching mode with low switching frequencies (several hundreds of hertz). However, for high-power dc–dc converters employ ...
Medium-voltage (MV) high-power converters are usually realized using high-voltage semiconductors (3.3kV, 4.5kV or 6.5kV) operated with low-switching frequencies in the range of several hundred Hz and under hard-switching conditions. However, for medium-vol ...
Medium voltage (MV) high power applications are usually realized using high voltage semiconductors (3.3kV and above) operated in hard switching mode with low switching frequencies (several hundreds of Hz). However, for high power DC-DC converters employing ...
This paper is focused on the design, modulation and control of a re-generative non-symmetrical multi-level converter for high-power applications such as oil and gas or mining. The converter is based on standard IGBT modules and the DC-link voltages are cho ...
We present the generation of high-power single-cycle terahertz (THz) pulses in the organic salt crystal 2-[3-(4-hydroxystyryl)-5.5-dimethylcyclohex-2-enylidene]malononitrile or OH1. Broadband THz radiation with a central frequency of 1.5 THz (lambda(c) = 2 ...
This paper presents a recently introduced switching principle for emerging monolithic bidirectional devices. Based on the hypothesis that those switches may overcome conventional diode type solutions in power converters, an active self-switching process be ...
Ieee Service Center, 445 Hoes Lane, Po Box 1331, Piscataway, Nj 08855-1331 Usa2009
This paper presents a remote powering realization for smart orthopedic implants with a full-wave rectifier and a voltage doubler. The measured power efficiency of the rectifier at 13.56 MHz is 80% for an output power of 20 mW with 2.2 V output. The rectifi ...
InAlGaAs/AlGaAs-based wafer-fused long-wavelength VCSELs with tunnel junction injection emitting in the 1310 nm and 1550 nm bands show high single-mode output and high speed modulation capabilities of 10 Gbps. Fundamental emission close to 6 mW at room tem ...
Ieee Service Center, 445 Hoes Lane, Po Box 1331, Piscataway, Nj 08855-1331 Usa2009
