Thermomechanical Nanostraining of Two-Dimensional Materials

Local bandgap tuning in two-dimensional (2D) materials is of significant importance for electronic and optoelectronic devices but achieving controllable and reproducible strain engineering at the nanoscale remains a challenge. Here, we report on thermomechanical nanoindentation with a scanning probe to create strain nanopatterns in 2D transition metal dichalcogenides and graphene, enabling arbitrary patterns with a modulated bandgap at a spatial resolution down to 20 nm. The 2D material is in contact via van der Waals interactions with a thin polymer layer underneath that deforms due to the heat and indentation force from the heated probe. Specifically, we demonstrate that the local bandgap of molybdenum disulfide (MoS2) is spatially modulated up to 10% and is tunable up to 180 meV in magnitude at a linear rate of about −70 meV per percent of strain. The technique provides a versatile tool for investigating the localized strain engineering of 2D materials with nanometer-scale resolution.

Spin-valley optoelectronics based on two-dimensional materials

Dmitrii Unuchek

Two-dimensional (2D) materials, in particular graphene and transition metal dichalcogenides (TMDC), have attracted great scientific interest over the last decade, revealing exceptional mechanical, electrical and optical properties. Owing to their layered nature, subnanometer-thick single-layer forms of these crystals can be chemically grown or mechanically isolated, representing an ultimately scaled-down platform for further miniaturization of electronic devices. Indeed, the large family of 2D materials contains hundreds of members, including metals, semiconductors, insulators, and others, covering the whole spectrum of potential applications. Availability of all necessary building blocks for the construction of all-2D solid-state devices makes this platform ideal for fabrication of ultrathin, transparent and flexible devices. Extensively investigated graphene has demonstrated excellent electrical properties. However, the absence of a bandgap is an obstacle for its interaction with light and therefore limits applications in optics. In this aspect, atomically thin TMDC semiconductors appear to be an alternative, more promising platform, as they possess a direct band gap in the visible range in the monolayer form. Despite being only three atoms thick, these semiconductors demonstrate exceptionally large light absorption, efficient light emission, and strong light-matter interaction, attracting justified interest from the optics community. We will focus on their potential applications for optoelectronics in Chapter 4. Even more, broken inversion symmetry and strong spin-orbit coupling in single-layer TMDC crystals reveal a new quantum number, the so-called valley index. Indeed, this unique degree of freedom of charge carriers is known for some materials since the 1970s. However, in the case of 2D semiconductors, spin-valley locking mechanism and valley contrasting optical selection rules open new ways for addressing, manipulation and sensing of this pseudospin, opening the whole new field of valleytronics. Due to the large splitting of the valence band, spin and valley degree of freedom become locked in these atomically thin materials. We employ this unique feature in Chapter 5 for indirect injection of spins into graphene by pumping valley polarized carriers in an adjacent TMDC monolayer. Being gapless, graphene does not allow direct optical injection of spins. Another striking feature of 2D materials is their unique ability to be stacked in vertical heterostructures with strong electrical coupling between layers. The weak van der Waals force, which keeps components together, provides freedom in the assembly process, so that a lattice mismatch or a twist angle becomes unimportant in the first approximation. This provides a novel platform for harvesting complementary properties of the constituent materials, allowing the engineering of new artificial meta-materials as we demonstrate in Chapter 6. Furthermore, synergistic effects in van der Waals heterostructures enable completely new properties and phenomena, which do not exist in the single materials, with twist angle being an important knob for tuning these effects. We observe and exploit such novel phenomena arising in heterostructures of 2D semiconductors in the last chapter of this thesis. On the way to the realization of practical optoelectronic and valleytronic applications, this thesis studies fundamental aspects of rich spin-valley physics of atomically thin semiconductors

EPFL2019

Electrical contacts to two-dimensional semiconductors

Adrien Victor Allain, Andras Kis

The performance of electronic and optoelectronic devices based on two-dimensional layered crystals, including graphene, semiconductors of the transition metal dichalcogenide family such as molybdenum disulphide (MoS2) and tungsten diselenide (WSe2), as well as other emerging two-dimensional semiconductors such as atomically thin black phosphorus, is significantly affected by the electrical contacts that connect these materials with external circuitry. Here, we present a comprehensive treatment of the physics of such interfaces at the contact region and discuss recent progress towards realizing optimal contacts for two-dimensional materials. We also discuss the requirements that must be fulfilled to realize efficient spin injection in transition metal dichalcogenides. © 2015 Macmillan Publishers Limited. All rights reserved.

Nature Publishing Group2015

Thermal scanning probe lithography for 2D material-based gas sensing

Berke Erbas

Recently, two-dimensional (2D) material based gas sensing, especially transition metal dichalcogenide-based sensing, has been widely investigated thanks to its room temperature sensing ability. Unlike metal oxide based sensors, 2D material-based sensing can be carried out without a heater, therefore it reduces the power consumption and makes them promising candidates for smartphones and wearable electronic devices. Besides gas sensing ability, these 2D materials are interesting and promising candidates for electronics and optoelectronics applications. For example, monolayer molybdenum disulfide (MoS2), which is a 2D semiconductor with direct bandgap, is one of the promising candidates for transistor but it has low mobility compared to silicon. To replace silicon-based devices, strain engineering of MoS2 is widely investigated. It is observed that tensile strain tunes the bandgap of MoS2, enhances carrier mobility and improves NO2 gas sensing by piezotronic effect. Different strategies have been used to strain MoS2 such as flexible substrates to stretch the exfoliated material on top of them, silicon/ dielectric substrates with surface roughness or silicon/dielectric substrates patterned with nanocone structure to locally strain transferred MoS2. Herein, field effect transistor with three-dimensionally patterned gate oxide is designed, fabricated and electrically characterized for sensing application. Thermal scanning probe lithography, which is a direct three-dimensional nanofabrication technique, is used for the fabrication of sinusoidal surfaces. By transferring the exfoliated MoS2 flakes on top of these sinusoidal gate oxide, biaxial strain is induced. Unlike counterparts, thermal scanning probe lithography-based patterning provides us design flexibility, which controls the direction of strain and the strain rate. As a result of Raman spectroscopy, the shifts in out-of-plane vibration (A1g) and in-plane vibration (E1 2g) modes are up to 0.87 cm−1 and 2.60 cm−1, respectively. According to the theoretical Raman spectra calculations of strained MoS2 [1], these shifts correspond to an average strain of 0.58% in a circular area with 1 μm diameter. The strain of 0.58% is obtained for a sinusoidal pattern having a 23 nm amplitude and a 440 nm period. Besides, as a result of photoluminescence characterization, it is shown that an average strain of 0.39% leads to a 35 meV redshift for A excitation peak position. Consequently, the strain of MoS2 on the surface patterned by thermal scanning probe lithography tunes the bandgap of MoS2 by 90.11 meV/%.