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Theory and Computation of Hall Scattering Factor in Graphene

Publications associées (34)

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Structural, electrical and magnetic characterization of in-situ crystallized ZnO:Co thin films synthesized by reactive magnetron sputtering

Andreas Schueler

Zn1-xCoxO (0 < x < 0.146) conductive thin films have been deposited by reactive magnetron sputtering of metallic Zn and Co targets at high pressure and temperature. The structural properties have been investigated by using X-ray diffraction (XRD) and X-ray ...

Elsevier Science Sa2015

In this thesis, angular resolved photoemission spectroscopy (ARPES) is used to study the electronic structure of different two-dimensional electron systems (2DES). This technique is very surface sensitive and the most direct method to probe the surface ban ...

EPFL2015

Dimensional crossover in the quantum transport behaviour of the natural topological insulator Aleksite

Klaus Kern, Marko Burghard, Pascal Gehring, Alexander Ronald Hoyer, Kristina Vaklinova

Three-dimensional topological insulators comprise topologically protected surface states displaying massless, Dirac-like linear dispersion with spin-momentum locking. Electrical conduction through such surface states has been documented to manifest itself ...

Nature Publishing Group2015

Unusual Shubnikov-de Haas oscillations in BiTeCl

Arnaud Magrez, Helmuth Berger, Philippe Bugnon

We report measurements of Shubnikov-de Haas oscillations in single crystals of BiTeCl at magnetic fields up to 31 T and at temperatures as low as 0.4 K. Two oscillation frequencies were resolved at the lowest temperatures, F-1 = 65 +/- 4 T and F-2 = 156 +/ ...

Amer Physical Soc2014

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We present a first-principles study of the temperature- and density-dependent intrinsic electrical resistivity of graphene. We use density-functional theory and density-functional perturbation theory together with very accurate Wannier interpolations to co ...

Amer Chemical Soc2014

Electron and Hole Mobilities in Single-Layer WSe2

Andras Kis, Adrien Victor Allain

Single-layer transition metal dichalcogenide WSe2 has recently attracted a lot of attention because it is a 2D semiconductor with a direct band gap. Due to low doping levels, it is intrinsic and shows ambipolar transport. This opens up the possibility to r ...

Amer Chemical Soc2014

Hall Cells Offset Analysis and Modeling Approaches

Maria-Alexandra Paun

The Hall Effect sensors are one of the most commonly used sensing technologies today. They are employed in many applications for direct magnetic field sensing and serve a multitude of low power applications within automotive and industrial electronics as c ...

EPFL2013

Conductivity and Ferroelectric Hysteresis in Bi4Ti3O12 Single Crystals Around Room Temperature

Nava Setter, Dragan Damjanovic

The dielectric response in Bi4Ti3O12 single crystals was studied at subswitching conditions at relative low temperatures (20-250 degrees C) and frequencies (100 mHz to 10kHz) both in-plane and out-of-plane. Electron-holes are likely to be the major charge ...

Taylor & Francis Ltd2013

The anatase phase of TiO2 is a key material in the third generation of photovoltaics and for photo-catalytic devices. The number of promising applications, where one would profit from the electronic degrees of freedom of the material, like in memristors, s ...

EPFL2012

Thermal carrier emission and nonradiative recombinations in nonpolar (Al,Ga)N/GaN quantum wells grown on bulk GaN

Nicolas Grandjean, Benoît Marie Joseph Deveaud, Etienne François Olivier Giraud, Jean-Daniel Ganière, Pierre Michel Corfdir

We investigate, via time-resolved photoluminescence, the temperature-dependence of charge carrier recombination mechanisms in nonpolar (Al,Ga)N/GaN single quantum wells (QWs) grown via molecular beam epitaxy on the a-facet of bulk GaN crystals. We study th ...

American Institute of Physics2012