Probing unconventional performance of fiber resonators: light storage, generation and manipulation

This thesis aims at investigating the performance of figure-9 (figure-of-nine) optical fiber resonators as a practical solution for light storage, light generation and manipulation. The first part of the thesis focuses on a theoretical and experimental study describing the performance of the figure-9 laser as a function of different coupling strengths and output coupling conditions. The study provides new insights on Sagnac interferometer-based fiber lasers, which can be useful also for other types of cavities that include this structure, such as the figure-8 (figure-of-eight) or the theta cavity laser. The work on the figure-9 laser is then followed by a generalized theoretical model, validated by numerical results, to demonstrate that resonant systems with a decoupled input and output energy rates can exhibit an arbitrarily high time-bandwidth performance, thus providing a longer delay/storage time. The developed model shows that the time-bandwidth product (TBP) of such a resonant system is only limited by the cavity finesse. This description fits with the time-bandwidth limit (TBL), which states that the cavity bandwidth $\Delta \omega_{\mathrm{cav}}$ is the inverse of the photon lifetime $\tau$ (i.e. $\Delta \omega_{\mathrm{cav}}\cdot \tau=1$ ), only when the resonator is reciprocal. The results also show that a longer storage time is accompanied by a significant improvement of the intra-cavity power enhancement, with respect to that provided by a reciprocal resonator, which is strongly desirable in all the applications that demand high efficiency in nonlinear processes. By comparing the total power enhancement in the reciprocal and nonreciprocal case, we prove that the TBP can be used as a figure of merit that characterizes the gain of total power enhancement, attained over one free spectral range (FSR) through nonreciprocal coupling, with respect to the reciprocal case considering the same amount of in-coupled power. The model is then used as a reference for an experimental implementation of such a system, at telecommunication wavelengths (around $1.55\,\mathrm{\mu m}$ ), using a time-variant figure-9 cavity. The results report a TBP that exceeds by a factor of 30 the TBL and is limited only by experimental constraints of the setup used. Lastly, the Sagnac interferometer in the context of generation of light is explored as to achieve electro-optic comb generation with a flat-topped spectral shape.

Realization and study of InAs/GaAs quantum dot superluminescent diodes emitting at 1.3µm

Marco Rossetti

A quantum dot is a semiconductor nanostructure that confines the motion of conduction band electrons and valence band holes in all three spatial directions, thus creating fully discrete energy levels. The confinement in the InAs/GaAs material system is generated by the bandgap difference for the two materials (∼ 0.4 eV for InAs, and ∼ 1.4 eV for GaAs) which provides a minimum of potential energy for both electrons and holes inside the InAs nanoparticle. The appearance of new nanoscale effects modifies the electro-optical properties of such a system which makes possible the improvement of existing device performance or even fascinating novel device applications. For the creation of coherent structures with very high purity and high density, as it is required for application in light emitting devices, self-assembling is a very important pathway. The quantum dot creation mostly relies on the relaxation of the strain accumulated during the growth of lattice mismatched materials, which happens in a non-equlibrium condition. This results in a statistical distribution of all the parameters characterizing the InAs nanocrystals as size, composition and strain, whose direct manifestation is the inhomogeneously broadened light emission deriving from quantum dot ensembles. At the dawning of the quantum dot development the broadening was considered as a limiting factor for application in semiconductor lasers. Today, it is considered favorably for all the applications where a broad gain spectrum is required as optical amplifiers, monolithic and external-cavity tunable lasers, and superluminescent diodes. The objective of this thesis is the application of InAs/GaAs self-assembled quantum dots to the active region of high power and broad-band superluminescent diodes emitting in the 1.3 μm wavelength region. Superluminescent diodes are edge-emitting semiconductor light sources based on the amplification of spontaneous emission along a waveguide where optical gain is achieved through current injection. They combine the high power and brightness of laser diodes with the low coherence of LEDs. The latter is a fundamental feature for the application in optical coherence tomography medical imaging, where the image resolution is related to the spectral bandwidth of the light source used. The achievement of bandwidths larger than 100 nm are demonstrated in this work through the optimization of molecular beam epitaxy growth conditions. This may be done optimizing the statistical size-dispersion of the dot ensemble, or through the use of different dot layers emitting at slightly different wavelengths. The large bandwidth emission is obtained also due to the peculiar energy structure of this material, for which a multi-state emission appears under particular injection conditions. As a term of comparison, best commercial single-chip superluminescent diodes for the imaging application at 1.3 μm show bandwidths around 60 nm. Moreover, the discrete nature of the energy levels in InAs quantum dots together with the implementation of a GaAs-based technology can be beneficial for the device temperature stability (the competing technology, based on InP, suffers from strong thermal degradation). The analysis and understanding of the device temperature characteristics will be detailed in the last chapter of the manuscript. Even though standard devices show an important temperature dependence, a better stability may be achieved through the use of p-doped active regions. In the last few years quantum dot devices have shown outstanding properties if compared to the competing quantum well technology. Low threshold currents, high temperature stability and low chirp in lasers, large bandwidths and low gain saturation in amplifiers have been demonstrated. However, in spite of the large interest among the scientific community, many of the microscopic processes at the origin of the electro-optical characteristics of this material are not completely understood yet. The physics of the quantum dot active material, will be modeled in this work through the use of systems of rate equations with different complexity depending on the system they are applied to. We will provide a mean-field rate equation model allowing to get insights about carrier dynamics in QD lasers. Also, we will develop two different traveling-wave rate equation models, one for the modeling of the L-I characteristics and the other for the modeling of the spectral characteristics of quantum dot superluminescent diodes. Considering the carrier and photon density distributions across the device cavity is essential in superluminescent diodes, where the high single pass gain results in large non-homogeneities of photon and carrier distributions. The work is motivated by an industrial cooperation with EXALOS AG, a leading company in the development, manufacturing, and sales of broadband superluminescent diodes.

EPFL2007

Dynamics of quantum dot lasers

Pablo Moreno

The exceptional performance of self-assembled Quantum Dot (QD) materials renders them extremely appealing for their use as optical communications devices. As lasers, they feature reduced and temperature independent threshold current and proper emission wavelength at the fiber telecommunication windows. These characteristics, together with the low linewidth enhancement factor and broad spectrum, make QD materials extremely attractive for application as light emitters or amplifiers. There exist, nevertheless, several unclear issues which prevent QDs from conquering the new generation of optoelectronic devices. Their differential efficiency is lower than expected. The output power of QD lasers is lower than that of their quantum well counterpart. Still, it is their dynamics which has incited the majority of studies. The modulation bandwidth of these devices seems to be limited by the relaxation of carriers from the upper energetic layers to the low levels within the dot. Besides, the electron-hole interaction is widely unknown, the extent of the electron-hole Coulombic attraction is not yet established. Throughout this thesis I present a theoretical and experimental study of the gain and phase dynamics of quantum dot lasers. I explain the appearance of different decay times observed in pump and probe experiments in QD amplifiers as a result of the different electron and hole relaxation times, by means of an electron-hole rate-equation model. The ultrafast hole relaxation first leads to an ultrafast recovery of the gain, which is then followed by electron relaxation and, on the nanosecond timescale, radiative and non-radiative recombinations. The phase dynamics is slower and is affected by thermal redistribution of carriers within the dot. Our results corroborate with spectral measurements of the dephasing and gain in QD amplifiers. Additionally, our work is compared with existing pump and probe results. Exploiting the capacity of QD lasers to emit at two different wavelengths corresponding to the ground state (GS) and excited state (ES), I present a theoretical study of the QD dynamics, based on a linearization of the QD rate-equations. The results predict the existence of single oscillation frequency of GS and ES, meaning that both states are highly coupled. In order to verify our theory, we perform two kinds of experiments. By modulating these lasers at high frequency, we measure separately the dynamics of GS and ES. However, in contradiction to our theory, two different modulation frequencies are found. Additional temporally-resolved measurements of the laser dynamics reveal a surprising effect. By injecting a sub-bandgap pump in an InAs/InGaAs QD laser, the emitted photons are depleted. Through additional transmission and photocurrent measurements, we relate this observation with carrier photoexcitation, which was so far only theoretically addressed. The role of carrier photoexcitation in our experimental laser dynamics is further supported by a rate-equation model. Impelled by this finding, we study the effect of carrier photoexcitation in the static and dynamic characteristics. We find that carrier photoexcitation reduces the efficiency of QD lasers, which is one of the major QD handicaps, and depletes the GS lasing after the ES threshold, as observed experimentally. Moreover, by adding carrier photoexcitation to our linearization of the rate-equations, we find that the theory predicts the appearance of two lasing resonance frequencies, in agreement with our previous experimental results. Additionally, we deal with the improvement of carrier relaxation. In tunnel injection devices, carriers are given an additional path towards the ground state of the dot by growing a quantum well layer close to the QD active plane. Through the quantum-mechanical tunneling effect, carriers relax from the nearby quantum well layer to the QDs, which speeds up relaxation. We aim at the increase of the modulation bandwidth while keeping the good performances quantum dot lasers have exhibited, such as low and temperature insensitive threshold current and proper emission wavelength. In the final part of this work, we present dynamical measurements of 1.5 µm InAs/InP tunnel injection and non-tunnel injection QD lasers, which display remarkable static characteristics. After proving with static measurements that tunnel injection is actually taking place in these structures, we show several dynamic measurements. Pump and probe measurements on QD devices show that the tunnel injection samples exhibit a slightly faster relaxation time than the non-tunnel injection samples used as reference, meaning that relaxation time is improved with tunnel injection. However, by probing the device with an ultrafast pump no improvement of the dynamic characteristics is observed. These results confirm that the laser dynamic properties of InP QD lasers, both standard and tunnel-injection designs, are actually not limited by relaxation of carriers. We point towards the size distribution of these quantum dash-like structures as the limiting factor of the modulation frequency.

EPFL2008

Multiple scattering in wide-field optical coherence tomography

Boris Karamata

Optical Coherence Tomography (OCT), a well-established imaging method based on low-coherence interferometry, provides cross-sectional images of the internal structure of biological samples with a resolution in the micrometer range. OCT was successfully applied on various tissues such as for instance the retina, the skin or a tooth. In highly scattering tissues like the skin, probing depth is limited to approximately 2mm, mainly due to insufficient rejection of multiply scattered light. Presently, the contribution of multiple scattering in OCT is not fully understood. Therefore, there is a strong and urgent need to develop models allowing a reliable evaluation of the system's limitations as well as the improvement of the imaging capabilities. It is generally believed that a relevant model should account for loss of correlation between the reference and the sample field due to multiple scattering. We developed a new comprehensive model of OCT. Our preliminary study revealed that the reference and sample fields are actually fully correlated. This important result allowed us to model the OCT signal as a sum of stationary random phasors and treated it as a statistical signal. The mean of this signal can be calculated thanks to classical results of statistical optics and to a Monte Carlo simulation. Unlike other existing models, our model accounts for the source autocorrelation function. The model proved to be in excellent agreement with a whole range of experimental data gathered in a comprehensive study of cross-talk in wide-field OCT. Moreover, our results put in question the applicability of widely used models of OCT based on the "extended Huygens-Fresnel principle", which assume a partial correlation between interfering fields due to multiple scattering. The construction of conventional OCT images is based on lateral scanning of a beam focused within the sample. To increase image acquisition speed and eliminate the need for lateral scanning, wide-field OCT was recently developed. Our experimental and theoretical investigations of the potential and limitations of wide-field OCT revealed the crucial role played by the spatial coherence of the light source. Spatially coherent illumination generates considerable coherent optical cross-talk, which prevents shot-noise-limited detection and diffraction-limited imaging in scattering samples. The dependence on several parameters of the optical system and of the sample properties was investigated in a comprehensive study. Cross-talk increases with the wide-field diameter, numerical aperture, source coherence length, and sample optical density; and strongly depends on sample anisotropy. We showed that spatially incoherent illumination realized with a thermal light source permits cross-talk suppression in wide-field OCT, i.e. rejection of multiply scattered light to a level comparable to that of point scanning OCT. We performed a theoretical study which revealed that the power per spatial mode radiated by thermal light sources is too low to permit a high signal-to-noise ratio while maintaining a fast acquisition speed. Therefore, wide-field OCT realized with either spatially coherent or spatially incoherent illumination suffers from inherent fundamental limitation. This led us to investigate the possibility of exploiting a spatially incoherent light source brighter than a thermal light source. We came to the conclusion that such a "pseudothermal" light source can potentially lead to wide-field OCT systems devoid of cross-talk and an image acquisition speed higher than that of a point scanning OCT system. However, the attractive properties of pseudothermal light sources could be gained at the expense of the simplicity and the economical advantages offered by thermal light sources. Furthermore, fast acquisition speed also relies on a performing "smart pixel detector array". Presently, such detectors do not have sufficient sensitivity and their frequency readout is too low as shown in our feasibility study. We performed a theoretical investigation of the potential of thermal light sources in terms of axial resolution and power per mode. The former revealed that the maximum power per mode is radiated at a wavelength higher than the spectral peak of a blackbody radiator. This led to the important practical conclusion that, at 6000 K, the maximum power is collected in the therapeutic spectral window in OCT (600 - 1300 nm), while at 3000 K this peak is shifted out of the therapeutic window leading to significant power losses. More generally, our work provides a design tool for choosing the optimal thermal light source for a given therapeutic window in terms of signal-to-noise ratio. Currently available sources at 6000 K consist of high pressure gas arc lamps providing a spectrum endowed with spectral lines deleterious for OCT. By suppressing a portion of the spectrum devoid of spectral lines of a mercury arc lamp, we obtained amongst the highest axial resolution so far reported in OCT. Furthermore, the importance of the speckle statistics in OCT incited us to clarify the origin of a difference between two theoretical results reported in the literature. Indeed, two calculations of the amplitude distribution of speckles in OCT, each of them based on a different mathematical formulation, yield different results. We showed that a modification of an initial assumption in one of the formulation leads to equivalent results. In conclusion, this thesis provides a deeper understanding of the potential and limitations of widefield OCT, leading to important design rules. Moreover, it presents a new comprehensive model of OCT putting in question other widely used models.

EPFL2004