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Optimized electrochemical breakdown etching using temporal voltage variation for formation of nanopores in a silicon membrane

Publications associées (49)

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Monolayer doping (MLD) of silicon substrates at the nanoscale is a powerful method to provide controlled doses of dopants and defect-free materials. However, this approach requires the deposition of a thick SiO2 cap layer to limit dopant evaporation during ...

2016

A Deep Etching Mechanism for Trench-Bridging Silicon Nanowires

Yusuf Leblebici, Zuhal Tasdemir

Introducing a single silicon nanowire with a known orientation and dimensions to a specific layout location constitutes a major challenge. The challenge becomes even more formidable, if one chooses to realize the task in a monolithic fashion with an extrem ...

Institute of Physics2016

Microfluidic Scintillation Detectors for High Energy Physics

Pietro Maoddi

This thesis deals with the development and study of microfluidic scintillation detectors, a technology of recent introduction for the detection of high energy particles. Most of the interest for such devices comes from the use of a liquid scintillator, whi ...

EPFL2015

Method to fabricate finfet sensors, in particular, finfet sensors for ionic, chemical and biological applications on si-bulk

Mihai Adrian Ionescu, Sara Rigante

The present invention relates to a method of producing a FinFET sensor device comprising the steps of: providing a silicon substrate; etching the silicon substrate to produce at least one upwardly extending Fin structure externally protruding from a surfac ...

2015

Silicon-on-Insulator Technology for Bioluminescence Imaging and Application to a Switching Photodetector

Maher Kayal, Adil Koukab, Denis Sallin, Nisrina Abdo

This paper analyzes some advantages of Silicon-on-Insulator (SOI) based photodetectors for bioluminescence imaging. It shows that SOI based sensors not only solve the bulk carriers problem, it can also act as a very selective spectral filter by acting as a ...

Ieee2015

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One-Dimensional (1D) nanostructures have gained a considerable attention in the field of semiconductor technology for the past several decades. With the help of rapid development in the process technology, it becomes possible to scale these nanostructures ...

2014

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We attempt to examine the potential of silicon nanowire memristors in the field of nanobiosensing. The mem- ristive devices are crystalline Silicon (Si) Nanowires (NWs) with Nickel Silicide (NiSi) terminals. The nanowires are fabricated on a Silicon-on-Ins ...

Institute of Electrical and Electronics Engineers2014

In-plane fabrication of insulated gold-tip probes for electrochemical and force spectroscopy molecular experiments

Nico de Rooij, Terunobu Akiyama, Sebastian Gautsch, Peter Van der Wal, Yexian Wu

A new and versatile fabrication process of insulated gold tip probes for atomic force microscopy (AFM) is presented by Wu et al. (In-plane fabricated insulated gold-tip probe for electrochemical and molecular experiments, in: 2013 IEEE 26th International C ...

Elsevier2014

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Carrier recombination at the metal-semiconductor contacts has become a significant obstacle to the further advancement of high-efficiency diffused-junction silicon solar cells. This paper provides the proof-of-concept of a procedure to reduce contact recom ...

American Institute of Physics2014

Encapsulated Low Frequency Vibrating Body Field Effect Resonator

Marion Hermersdorf

Resonators for time and frequency reference applications are essential elements found in most electronic devices surrounding us. The continuous minimization and ubiquitous distribution of such electronic devices and circuits demands for resonators of small ...

EPFL2013