Publication

Modeling the Shape Evolution of Selective Area Grown Zn3P2 Nanoislands

Publications associées (35)

Zn3P2 as an earth-abundant photovoltaic material: from growth to device

Rajrupa Paul

The development of cost-effective and earth-abundant semiconducting materials is imperative for the sustainable deployment of photovoltaic technology. Zinc phosphide (Zn3P2) is a promising candidate for terawatt-scale electricity generation. It has a near- ...
EPFL2023

The native oxide skin of liquid metal Ga nanoparticles prevents their rapid coalescence during electrocatalysis

Raffaella Buonsanti, Anna Loiudice, Dragos-Constantin Stoian, Jan Vávra, Valery Okatenko, Laia Castilla Amorós

Liquid metals (LMs) have been used in electrochemistry since the 19th century, but it is only recently that they have emerged as electrocatalysts with unique properties, such as inherent resistance to coke-poisoning, which derives from the dynamic nature o ...
2022

Nanopillars Enabling III-V Integration on Si (100) and (111)

Lucas Güniat

The majority of current semiconductor technologies are built on Si (100), such as the CMOS technology, or conventional solar cell devices. III-V semiconductors offer great perspectives given their high carrier mobility and direct band gap. However their in ...
EPFL2021

Crystalline Order in Compound Semiconductors in Nanoscale Structures and Thin Films

Mahdi Zamani

Semiconductors materials and devices are essential building blocks for many of the technologies deeply embedded in modern life. Improving the performance of semiconductor devices requires a deeper understanding of the fundamental mechanisms controlling the ...
EPFL2021

van der Waals Epitaxy of Earth-Abundant Zn3P2 on Graphene for Photovoltaics

Anna Fontcuberta i Morral, Roland Logé, Cyril Cayron, Elias Zsolt Stutz, Shreyas Sanjay Joglekar, Jean-Baptiste Leran, Mahdi Zamani, Simon Robert Escobar Steinvall, Rajrupa Paul, Nicolas Philippe Laurent Humblot

Earth-abundant semiconducting materials are a potential solution for large-scale deployment of solar cells at a lower cost. Zinc phosphide (Zn3P2) is one such Earth-abundant material with optoelectronic properties suitable for photovoltaics. Herein, we rep ...
2020

Heterotwin Zn3P2 superlattice nanowires: the role of indium insertion in the superlattice formation mechanism and their optical properties

Anna Fontcuberta i Morral, Elias Zsolt Stutz, Jean-Baptiste Leran, Mahdi Zamani, Simon Robert Escobar Steinvall, Nicolas Tappy, Rajrupa Paul, Reza Zamani, Lea Ghisalberti

Zinc phosphide (Zn3P2) nanowires constitute prospective building blocks for next generation solar cellsdue to the combination of suitable optoelectronic properties and an abundance of the constitutingelements in the Earth’s crust. The generation of periodi ...
2020

Growth and characterisation of earth-abundant semiconductor nanostructures for solar energy harvesting

Simon Robert Escobar Steinvall

Zinc phosphide (Zn3P2) is a compound semiconductor based on earth-abundant elements with functional properties ideal for solar cell applications. Cheap, abundant, and renewable energy sources are increasingly imperative due to the imminent threat posed by ...
EPFL2020

A multi-technique approach to study the microstructural properties of tin-based transparent conductive oxides

Federica Landucci

Transparent conductive oxides (TCOs) are semiconductor-like materials that exhibit high electrical conductivity and high optical transparency combined. They are adopted in various applications ranging from gas sensors, to electrochromic windows, to photovo ...
EPFL2019

Thermodynamic re-assessment of the Zn–P binary system

Anna Fontcuberta i Morral, Elias Zsolt Stutz, Mahdi Zamani, Simon Robert Escobar Steinvall

Thermodynamic phase diagrams are the cornerstones to develop synthesis of new materials. Zinc phosphide has evolved into a prospective semicontuctor for next generation solar cells, thanks to its abundance and functional properties. Here we derive an optim ...
2019

Growth kinetics and morphological analysis of homoepitaxial GaAs fins by theory and experiment

Anna Fontcuberta i Morral, Gözde Tütüncüoglu, Martin George Friedl, Lea Ghisalberti

Nanoscale membranes have emerged as a new class of vertical nanostructures that enable the integration of horizontal networks of III-V nanowires on a chip. To generalize this method to the whole family of III-Vs, progress in the understanding of the membra ...
AMER PHYSICAL SOC2018

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