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Memory chip or memory array for wide-voltage range in-memory computing using bitline technology

Publications associées (38)

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2D Nanosystems: Applications of 2D Semiconductors for In-Memory Computing

Guilherme Migliato Marega

Machine learning and data processing algorithms have been thriving in finding ways of processing and classifying information by exploiting the hidden trends of large datasets. Although these emerging computational methods have become successful in today's ...

EPFL2023

Bit-Line Computing for CNN Accelerators Co-Design in Edge AI Inference

David Atienza Alonso, Giovanni Ansaloni, Alexandre Sébastien Julien Levisse, Marco Antonio Rios, Flavio Ponzina

By supporting the access of multiple memory words at the same time, Bit-line Computing (BC) architectures allow the parallel execution of bit-wise operations in-memory. At the array periphery, arithmetic operations are then derived with little additional o ...

2023

Impact of Interface Traps in Floating-Gate Memory Based on Monolayer MoS2

Andras Kis, Guilherme Migliato Marega

Two-dimensional materials (2DMs) have found potential applications in many areas of electronics, such as sensing, memory systems, optoelectronics, and power. Despite an intense experimental work, the literature is lacking of accurate modeling of nonvolatil ...

IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC2022

Even if Dennard scaling came to an end fifteen years ago, Moore's law kept fueling an exponential growth in compute performance through increased parallelization. However, the performance of memory and, in particular, Dynamic Random Access Memory (DRAM), ...

EPFL2021

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A random access memory array including a plurality of local memory group ways, each local memory group way including, a plurality of local memory groups, each local memory group including, a memory column including a plurality of memory cells, a pair of lo ...

2021

Gain-Cell Embedded DRAMs: Modeling and Design Space

Andreas Peter Burg, Adam Shmuel Teman, Robert Giterman, Andrea Bonetti

Among the different types of dynamic random-access memories (DRAMs), gain-cell embedded DRAM (GC-eDRAM) is a compact, low-power, and CMOS-compatible alternative to conventional static random-access memory (SRAM). GC-eDRAM achieves high memory density, as i ...

IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC2020

Embedded memories, mostly implemented with static random access memory (SRAM), dominate the area and power of integrated circuits. Gain-cell embedded DRAM (GC-eDRAM) is an alternative to SRAM due to its high density, low power consumption, and two-ported f ...

ELSEVIER SCI LTD2020

Exploration Methodology for BTI-Induced Failures on RRAM-Based Edge AI Systems

David Atienza Alonso, Alexandre Sébastien Julien Levisse, Miguel Peon Quiros, Marco Antonio Rios

Resistive switching memory technologies (RRAM) are seen by most of the scientific community as an enabler for Edge-level applications such as embedded deep Learning, AI or signal processing of audio and video signals. However, going beyond a "simple'' repl ...

IEEE2020

Data-Retention-Time Characterization of Gain-Cell eDRAMs across the Design and Variations Space

Andreas Peter Burg, Andrea Bonetti

The rise of data-intensive applications has increased the demand for high-density and low-power embedded memories. Among them, the gain-cell embedded DRAM (GC-eDRAM) is a suitable alternative to the static random access memory (SRAM) due to its high memory ...

IEEE2019

The capability to process high-resolution videos in real-time is becoming more important in a wide variety of applications such as autonomous vehicles, virtual reality or intelligent surveillance systems. The high-accuracy and complex video processing algo ...

EPFL2019