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Ultrafast laser interaction with transparent multi-layer SiO2/Si3N4 films

Publications associées (36)

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Functional properties of III-V nanowires addressed by Raman spectroscopy

Francesca Amaduzzi

In recent years, semiconductor nanowires have attracted considerable attention as a result of their unique properties and potential applications in many fields. In particular, they can be very attractive materials for certain optoelectronic and electronic ...

EPFL2017

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A method for visualizing structures inside a cochlea, comprising the steps of irradiating a cochlear bone with a first laser light to ablate portions of the cochlear bone, to form a thinned area of the cochlear bone, and imaging intracochlear structures by ...

2017

Regenerative similariton laser

Camille Sophie Brès, Thibault Emmanuel North

Self-pulsating lasers based on cascaded reshaping and reamplification (2R) are capable of initiating ultrashort pulses despite the accumulation of large amounts of nonlinearities in all-fiber resonators. The spectral properties of pulses in self-similar pr ...

Amer Inst Physics2016

Optoelectronic Devices Based on Monolayer Transition Metal Dichalcogenides

Oriol López Sánchez

Monolayer transition metal dichalcogenides (TMD) such as molybdenum disulfide (MoS2), tungsten diselenide (WSe2) and tungsten disulfide (WS2), have shown in the last years remarkable physical properties. These direct badgap three-atoms thick monolayers, wi ...

EPFL2016

Near-Unity Absorption in van der Waals Semiconductors for Ultrathin Optoelectronics

Giulia Tagliabue

We demonstrate near-unity, broadband absorbing optoelectronic devices using sub-15 nm thick transition metal dichalcogenides (TMDCs) of molybdenum and tungsten as van der Waals semiconductor active layers. Specifically, we report that near-unity light abso ...

2016

Quantification of Bulk Densification in Fused Silica Induced by Femtosecond Laser Exposure in the Sub-50 fs Regime

Yves Bellouard

Using micro-cantilever deflection, we study laser-induced densification in bulk fused silica in the sub-50 fs, non-ablative regime. We estimate induced densification from deflection measurements, with a maximum value of 0.014%. ...

Ieee2016

Composition of Wide Bandgap Semiconductor Materials and Nanostructures Measured by Atom Probe Tomography and Its Dependence on the Surface Electric Field

Nicolas Grandjean, Jean-François Carlin, Raphaël Butté

Atom probe tomography allows for three-dimensional reconstruction of the elemental distribution in materials at the nanoscale. However, the measurement of the chemical composition of compound semiconductors may exhibit strong biases depending on the experi ...

Amer Chemical Soc2014

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Two-dimensional (2D) materials are a new type of materials under intense study because of their interesting physical properties and wide range of potential applications from nanoelectronics to sensing and photonics. Monolayers of semiconducting transition ...

Amer Chemical Soc2014

Dilute-Nitride Low-Dimensional Nanostructures Formed on Non-Planar Substrates

Romain Carron

The properties of semiconductors heterostructures of nanoscopic dimensions change from that of bulk material according to the rules of quantum mechanics. The planar quantum wells (QWs) are widely used in various diode and laser devices thanks to the relati ...

EPFL2013

Nanostructuring and lattice dynamics of materials by femtosecond lasers

Ahmad Odeh

Physically, the colour of an object is a complex result of its intrinsic surface properties, its transmission properties and its emission properties, all of which contribute to the mix of wavelengths in the light leaving the surface of the object. Structur ...

EPFL2013