Publication

Impact of rapid thermal processing on bulk and surface recombination mechanisms in FZ silicon with fired passivating contacts

Publications associées (34)

Graph Chatbot

Chattez avec Graph Search

Posez n’importe quelle question sur les cours, conférences, exercices, recherches, actualités, etc. de l’EPFL ou essayez les exemples de questions ci-dessous.

AVERTISSEMENT : Le chatbot Graph n'est pas programmé pour fournir des réponses explicites ou catégoriques à vos questions. Il transforme plutôt vos questions en demandes API qui sont distribuées aux différents services informatiques officiellement administrés par l'EPFL. Son but est uniquement de collecter et de recommander des références pertinentes à des contenus que vous pouvez explorer pour vous aider à répondre à vos questions.

Connectez-vous pour utiliser Chat avec Graph Search

Bulk Defects and Hydrogenation Kinetics in Crystalline Silicon Solar Cells With Fired Passivating Contacts

Christophe Ballif, Franz-Josef Haug, Andrea Ingenito, Audrey Marie Isabelle Morisset, Philippe Wyss, Mario Joe Lehmann, Père Roca i Cabarrocas

In this article, the effect of the various processing steps during the fabrication of c-Si/SiOx/SiCx fired passivating contacts on the silicon bulk lifetime is studied, and the kinetics of defect deactivation by hydrogenation is investigated. It is found t ...

IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC2022

The recombination of photogenerated charge carriers at metal-semiconductor interfaces remains a major source of efficiency loss in photovoltaic cells. Here, we present SiNx and AlOx nanolayers as promising interface dielectrics to enable high efficiency ho ...

IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC2022

Today more than ever the world needs clean energy sources and thus a fast deployment and scaling up of the photovoltaic industry. In this context improving solar cell efficiency plays a major role. In order to achieve the maximum single junction efficiency ...

EPFL2022

Characterization and Development of Fired Passivating Contacts for Silicon Solar Cells

Mario Joe Lehmann

One of the key elements to improve mainstream crystalline silicon (c-Si) solar cell performance is surface passivation, which is at the center of the ongoing transition from cells with direct silicon-metal contacts to full area passivating contacts. In the ...

EPFL2022

Passivating Polysilicon Recombination Junctions for Crystalline Silicon Solar Cells

Christophe Ballif, Franz-Josef Haug, Aïcha Hessler-Wyser, Quentin Thomas Jeangros, Andrea Ingenito, Audrey Marie Isabelle Morisset, Philippe Wyss, Mario Joe Lehmann

Polysilicon recombination junctions whose n-type bottom layers double as a passivating contact to the silicon surface are investigated. Such recombination junctions are a key element in the interconnection of tandem devices with a silicon bottom cell, and ...

2021

, , , ,

Silicon heterojunction (SHJ) solar cell efficiencies are limited by parasitic absorption from the hydrogenated amorphous silicon (a-Si:H) front contact, but this may be mitigated by selecting an alternative carrier selective contact material with a wider b ...

2020

Linking simulation and synthesis of nickel oxide hole-selective contacts for silicon heterojunction solar cells

Christophe Ballif, Mathieu Gérard Boccard, Jan Haschke, Angela Nicole Fioretti, Rachel Emma Woods-Robinson

In silicon heterojunction (SHJ) solar cells, one factor limiting efficiency is "parasitic absorption" from amorphous silicon (a-Si) at the front surface. Thus, discovery of a transparent hole-selective contact to replace p-type a-Si is a promising area of ...

IEEE2020

, ,

This work presents a systematic analysis of the transport mechanism and surface passivation of tunneling oxide (SiO2)/p-type poly-silicon (poly-Si(p)) junctions applied to p-type crystalline silicon (c-Si) solar cells by means of TCAD numerical simulations ...

ELSEVIER2019

Increasing N content in GaNAsP nanowires suppresses the impact of polytypism on luminescence

Anna Fontcuberta i Morral, Luca Francaviglia

Cathodoluminescence (CL) and micro-photoluminescence spectroscopies are employed to investigate effects of structural defects on carrier recombination in GaNAsP nanowires (NWs) grown by molecular beam epitaxy on Si substrates. In the NWs with a low N conte ...

2019

, ,

Intrinsic amorphous silicon provides excellent surface passivation on crystalline silicon. It has previously been shown, that carriers that are photo generated in the amorphous silicon can be efficiently electronically injected into the crystalline silicon ...

ELSEVIER SCIENCE BV2018