LiNiO Junction Gate for High-performance Enhancement-mode GaN Power Transistor
Graph Chatbot
Chattez avec Graph Search
Posez n’importe quelle question sur les cours, conférences, exercices, recherches, actualités, etc. de l’EPFL ou essayez les exemples de questions ci-dessous.
AVERTISSEMENT : Le chatbot Graph n'est pas programmé pour fournir des réponses explicites ou catégoriques à vos questions. Il transforme plutôt vos questions en demandes API qui sont distribuées aux différents services informatiques officiellement administrés par l'EPFL. Son but est uniquement de collecter et de recommander des références pertinentes à des contenus que vous pouvez explorer pour vous aider à répondre à vos questions.
The outstanding properties of Gallium Nitride (GaN) have enabled considerable improvements in the performance of power devices compared to traditional silicon technology, resulting in more efficient and highly compact power converters. GaN power technology ...
Gallium Nitride (GaN) is a wonder material which has widely transformed the world by enabling
energy-efficient white light-emitting diodes. Over the past decade, GaN has also emerged as one
of the most promising materials for developing power devices which ...
Gallium Nitride (GaN) is one of the most promising materials for high frequency power switching due to its exceptional properties such as large saturation velocity, high carrier mobility, and high breakdown field strength. The high switching frequency of G ...
Multi-channel GaN power device, consisting of stacking multiple two-dimensional-electron-gas (2DEG) channels, has been demonstrated to achieve unprecedented on-state performance while maintaining high breakdown voltage (VBR). However, the large carrier den ...
III-N family of materials has offered multiple groundbreaking technologies in the field of optoelectronics and high-power radio-frequency (RF) devices. Blue light-emitting diodes (LEDs) have revolutionized low-energy lighting. Gallium nitride (GaN) RF mark ...
Over the last decade, gallium nitride (GaN) has emerged as an excellent material for the fabrication of power devices. Among the semiconductors for which power devices are already available in the market, GaN has the widest energy gap, the largest critical ...
The emergence of wide-band-gap (WBG) power transistors with low conduction losses and high-speed switching speeds has paved the way for more-than-ever efficient power electronics systems and huge energy saving potentials. Likewise, power density- the ratio ...
Nanowire-based devices can potentially be of use in a variety of electronic applications, from ultrascaled digital circuits to 5G communication networks. However, the devices are typically restricted to low-power applications due to the relatively low elec ...
The international actions against global warming demands reductions in carbon emission and more efficient use of energy. Energy efficiency in the conversion and use of electricity, as an important form of energy in the modern life, has strong environmental ...
To best utilize power converters, a sound understanding of the relationship between the circuit topology and the power-semiconductor-device characteristics is required. This is especially important in high-frequency switching, where device parasitics start ...