Publication
Comparison of Two in Pixel Source Follower Schemes for Deep Subelectron Noise CMOS Image Sensors
Publications associées (36)
Cascaded all-optical quantization employing step-size MMI and shape-optimized power splitter
Jijun He, Xiaowei Zhang, Jian Wu, Ye Tian
As a key unit of future high-throughput communications, optical analog to digital converter (OADC) with all-optical quantizer element that simultaneously possesses high resolution, large bandwidth and compact size is highly promising. A pending issue of co ...
ELSEVIER SCI LTD2023Architecture for integrated RF photonic downconversion of electronic signals
Electronic analog to digital converters (ADCs) are run-ning up against the well-known bit depth versus bandwidth trade off. Towards this end, radio frequency (RF) photonic-enhanced ADCs have been the subject of interest for some time. Optical frequency com ...
Optica Publishing Group2023RDS: FPGA Routing Delay Sensors for Effective Remote Power Analysis Attacks
Mirjana Stojilovic, Ognjen Glamocanin, David Spielmann
State-of-the-art sensors for measuring FPGA voltage fluctuations are time-to-digital converters (TDCs). They allow detecting voltage fluctuations in the order of a few nanoseconds. The key building component of a TDC is a delay line, typically implemented ...
2023ANTIGONE: A Programmable Energy-Efficient Current Digitizer for an ISFET Wearable Sweat Sensing System
Maher Kayal, Evgenia Voulgari, François Krummenacher
This article describes the design and the characterization of the ANTIGONE (ANalog To dIGital cONvErter) ASIC (Application Specific Integrated Circuit) built in AMS 0.35 m technology for low dc-current sensing. This energy-efficient ASIC was specifically d ...
2021Cryo-CMOS for Analog/Mixed-Signal Circuits and Systems
Edoardo Charbon, Fabio Sebastiano
CMOS circuits operating at cryogenic temperature (cryo-CMOS) are required in several low-temperature applications. A compelling example is the electronic interface for quantum processors, which must reside very close to the cryogenic quantum devices it ser ...
IEEE2020A programmable low-power ADC interface for an ISFET sweat sensor used in a wearable multi-sensing system
Maher Kayal, Evgenia Voulgari, François Krummenacher
An application specific integrated circuit (ASIC) named ANTIGONE (ANalog To dIGital cONvErter) was designed in AMS 0.35 mu m technology to interface with four Ion-sensitive field-effect transistor (ISFET) sensors and perform real-time monitoring of some bi ...
IEEE2019Oscillator arrangement for time-to-digital converter for large array of time-of-flight image sensor devices
Edoardo Charbon, Preethi Padmanabhan, Augusto Ronchini Ximenes
An oscillator arrangement for time-to-digital converters for a 3D image sensor device includes a plurality of oscillators arranged as an array each oscillator being associated to one time-to-digital converter, and at least one coupling unit respectively ar ...
2019A low-voltage CMOS-compatible time-domain photodetector, device & front end electronics
During the last decades, the usage of silicon photodetectors, both as stand-alone sensor or integrated in arrays, grew tremendously. They are now found in almost any application and any market range, from leisure products to high-end scientific apparatuses ...
EPFL2016Thermal Issues in Deep Sub-Micron FDSOI Circuits
Self-heating effects became more prominent with the introduction of the modern devices like FDSOI and low thermal conductivity materials such as SiO2. Consequently, the design of high speed digital circuits which are the time-critical blocks of high perfor ...
Ieee2016Robustness Analysis of Controllable-Polarity Silicon Nanowire Devices and Circuits
Substantial downscaling of the feature size in current CMOS technology has confronted digital designers with serious challenges including short channel effect and high amount of leakage power. To address these problems, emerging nano-devices, e.g., Silicon ...
EPFL2016