New ultrahigh-speed device concepts: from THz nanoplasma devices to glass-like electronics for neuromorphic computation
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Nucleation and growth models are well developed for nucleation on homogeneous substrates, and they can typically be described-in terms of three energy parameters. Nucleation on substrates containing point-defect traps has been investigated, at the cost of ...
In this work we report on solar blind (Al,Ga)N photovoltaic metal-semiconductor-metal (MSM) detectors with a cutoff wavelength as short as similar to270 nm. (Al,Ga)N heterostructures, that allow backside illumination, were grown on sapphire substrates by b ...
Recently, it was shown that semiconductor-metal hybrid structures can exhibit a very large magnetoresistance effect, the so-called extraordinary magnetoresistance (EMR) effect. This led to the perspective of using EMR devices in magnetic-field sensors and ...
The invention concerns a method for making a suspended microstructure comprising the following steps: forming a masking layer on a substrate top surface; structuring the masking layer to form at least an opening substantially defining the surface of said m ...
This paper presents a new and simple compact model for the intrinsic metal oxide semiconductor (MOS) transistor, which accurately takes into account the non quasistatic (NQS) effects. This is done without any additional assumption or simplification than th ...
Photoelectron spectromicroscopy, the combination of conventional photoelectron spectroscopy and high lateral resolution, is a novel technique that exploits the high brightness of the most recent synchrotron sources. We briefly review its main implementatio ...
An entire microsystem for high accuracy magnetic field measurement based on vertical Hall devices has been simulated. In accordance with existing knowledge about semiconductor physics and experimental results, a functional SPICE- model for a vertical Hall ...
Using a highly sensitive silicon Hall sensor fabricated in a standard complementary metal-oxide-semiconductor (CMOS) technology, we detect a single magnetic microbead of 2.8 μm in diameter. The miniaturized sensor has an active area of 2.4×2.4 μm 2, a sens ...
Leakage conduction of Pt-Pb(ZrXTi:(1-X))O-3-Pt capacitors is studied by means of different measuring techniques and analyzed in terms of semiconductor properties of the system. Based on the experimental data, it is concluded that two different regimes of c ...
The experimental and theoretical progress in understanding the electronic structure and the related parameters of Schottky interfaces and heterojunctions is reviewed. Particular emphasis is devoted to the solution of several historical controversial points ...