A 128-kbit GC-eDRAM With Negative Boosted Bootstrap Driver for 11.3x Lower-Refresh Frequency at a 2.5% Area Overhead in 28-nm FD-SOI
Publications associées (38)
Graph Chatbot
Chattez avec Graph Search
Posez n’importe quelle question sur les cours, conférences, exercices, recherches, actualités, etc. de l’EPFL ou essayez les exemples de questions ci-dessous.
AVERTISSEMENT : Le chatbot Graph n'est pas programmé pour fournir des réponses explicites ou catégoriques à vos questions. Il transforme plutôt vos questions en demandes API qui sont distribuées aux différents services informatiques officiellement administrés par l'EPFL. Son but est uniquement de collecter et de recommander des références pertinentes à des contenus que vous pouvez explorer pour vous aider à répondre à vos questions.
The rise of data-intensive applications has increased the demand for high-density and low-power embedded memories. Among them, the gain-cell embedded DRAM (GC-eDRAM) is a suitable alternative to the static random access memory (SRAM) due to its high memory ...
Embedded memories occupy an increasingly dominant part of the area and power budgets of modern systems-on-chips (SoCs). Multi-ported embedded memories, commonly used by media SoCs and graphical processing units, occupy even more area and consume higher pow ...
Embedded memories, mostly implemented with static random access memory (SRAM), dominate the area and power of integrated circuits. Gain-cell embedded DRAM (GC-eDRAM) is an alternative to SRAM due to its high density, low power consumption, and two-ported f ...
Among the different types of dynamic random-access memories (DRAMs), gain-cell embedded DRAM (GC-eDRAM) is a compact, low-power, and CMOS-compatible alternative to conventional static random-access memory (SRAM). GC-eDRAM achieves high memory density, as i ...
The rise of data-intensive applications has resulted in an increasing demand for high-density and low-power on-chip embedded memories. Gain-cell embedded DRAM (GC-eDRAM) is a logic-compatible alternative to conventional static random access memory (SRAM) w ...
Among the different types of DRAMs, gain-cell embedded DRAM (GC-eDRAM) is a compact, low-power and CMOS-compatible alternative to conventional SRAM. GC-eDRAM achieves high memory density as it relies on a storage cell that can be implemented with as few as ...
IEEE2020
Utilization of edge devices has exploded in the last decade, with such use cases as wearable devices, autonomous driving, and smart homes. As their ubiquity grows, so do expectations of their capabilities. Simultaneously, their formfactor and use cases lim ...
EPFL2022
Even if Dennard scaling came to an end fifteen years ago, Moore's law kept fueling an exponential growth in compute performance through increased parallelization. However, the performance of memory and, in particular, Dynamic Random Access Memory (DRAM), ...
EPFL2021
,
A gain-cell embedded DRAM (GC-eDRAM) is an attractive logic-compatible alternative to the conventional static random access memory (SRAM) for the implementation of embedded memories, as it offers higher density, lower leakage, and two-ported operation. How ...
As an increase of intelligent and self-powered devices is forecasted for our future everyday life, the implementation of energy-autonomous devices that can wirelessly communicate data from sensors is crucial. Even though techniques such as voltage scaling ...