Publication
Time-resolved multi-gate ion sensitive field effect transducer and system and method of operating the same
Publications associées (36)
Font Side Solutions for c-Si Solar Cells with High-Temperature Passivating Contacts
In this work, we studied the potential of using thin films deposited by plasma-enhanced chemical vapor deposition (PECVD) for two main purposes: introducing an n-type passivating contact at the front of a TOPCon solar cell, or simplifying the fabrication o ...
EPFL2024A 73% Peak PDP Single-Photon Avalanche Diode Implemented in 110 nm CIS Technology With Doping Compensation
Edoardo Charbon, Claudio Bruschini, Ekin Kizilkan, Utku Karaca, Myung Jae Lee
In this article, we present 10 mu m diameter SPADs fabricated in 110 nm CIS technology based on an N (+) /HVPW junction, with enhanced sensitivity at short wavelengths. To reduce tunneling noise due to the highly-doped layers in the process, a doping compe ...
Ieee-Inst Electrical Electronics Engineers Inc2024Intrinsic Polarization Super Junctions: Design of Single and Multichannel GaN Structures
Elison de Nazareth Matioli, Luca Nela, Catherine Erine, Amirmohammad Miran Zadeh
Super junctions (SJs) have enabled unprecedented performance in Silicon power devices, which could be further improved by applying this concept to wide bandgap semiconductors like gallium nitride (GaN). Currently, polarization super junctions (PSJs) are th ...
2022Fabrication of a Hydrogenated Amorphous Silicon Detector in 3-D Geometry and Preliminary Test on Planar Prototypes
Sylvain Dunand, Matthew James Large
Hydrogenated amorphous silicon (a-Si:H) can be produced by plasma-enhanced chemical vapor deposition (PECVD) of SiH4 (silane) mixed with hydrogen. The resulting material shows outstanding radiation hardness properties and can be deposited on a wide variety ...
2021Gradient flow emulation using drift diffusion processes
The present invention concerns a method of emulating gradient flow for solving a given problem as a charge distribution in a device (1) comprising: first type charge carrier regions (5) interfacing a second type charge carrier region (11) thereby forming c ...
2021Nanoscale imaging of mobile carriers and trapped charges in delta doped silicon p-n junctions
Broadband electrostatic force microscopy can be used to non-destructively image n-type and p-type dopant layers in silicon devices with a lateral resolution of 10 nm and a vertical resolution of 0.5 nm. Integrated circuits and certain silicon-based quantum ...
NATURE PUBLISHING GROUP2020Characterisation of Silicon Heterojunction Solar Cells Beyond Standard Test Conditions
The global photovoltaic market is mostly dominated by solar cells based on crystalline silicon (c-Si), which are covering 95% of the market. This thesis concerns silicon heterojunction (SHJ), a high-efficiency technology with a 2% market share in 2018, but ...
EPFL2020Numerical simulations of hole carrier selective contacts in p-type c-Si solar cells
Christophe Ballif, Andrea Ingenito, Philipp Friedrich Hermann Löper
This work presents a systematic analysis of the transport mechanism and surface passivation of tunneling oxide (SiO2)/p-type poly-silicon (poly-Si(p)) junctions applied to p-type crystalline silicon (c-Si) solar cells by means of TCAD numerical simulations ...
ELSEVIER2019Polarity-Controllable Devices and Circuits for Doping-Free 2D Electronics
The growth of information technology has been sustained by the miniaturization of Complementary Metal-Oxide-Semiconductor (CMOS) Field-Effect Transistors (FETs), with the number of devices per unit area constantly increasing, as exemplified by Mooreâs la ...
EPFL2019Doping-Free Complementary Logic Gates Enabled by Two-Dimensional Polarity-Controllable Transistors
Giovanni De Micheli, Giovanni Vincenzo Resta, Pierre-Emmanuel Julien Marc Gaillardon
Atomically thin two-dimensional (2D) materials belonging to transition metal dichalcogenides, due to their physical and electrical properties, are an exceptional vector for the exploration of next-generation semiconductor devices. Among them, due to the po ...
2018