Publication

Piezoelectric Properties of BiFeO3 Exposed to High Temperatures

Publications associées (34)

Graph Chatbot

Chattez avec Graph Search

Posez n’importe quelle question sur les cours, conférences, exercices, recherches, actualités, etc. de l’EPFL ou essayez les exemples de questions ci-dessous.

AVERTISSEMENT : Le chatbot Graph n'est pas programmé pour fournir des réponses explicites ou catégoriques à vos questions. Il transforme plutôt vos questions en demandes API qui sont distribuées aux différents services informatiques officiellement administrés par l'EPFL. Son but est uniquement de collecter et de recommander des références pertinentes à des contenus que vous pouvez explorer pour vous aider à répondre à vos questions.

Connectez-vous pour utiliser Chat avec Graph Search

Strong ferroelectric domain-wall pinning in BiFeO3 ceramics

Nava Setter, Dragan Damjanovic, Marija Kosec

We have studied the polarization-electric-field hysteresis, the dielectric permittivity dispersion, the piezoelectric properties, the electric-field-induced strain, and the interrelations between these properties for bismuth ferrite (BiFeO3) ceramics. The ...

American Institute of Physics2010

, ,

Tunnel FETs (TFETs) have attracted much interest in the last decade for their potential to be used as small slope switches, suitable for future logic circuits operating with a supply voltage smaller than 0.5 V and for reduced Ioff levels. It has been shown ...

IEEE2010

Ferroelectric Nanowires

Jin Wang

Ferroelectric perovskites exhibit superior dielectric, piezoelectric and ferroelectric properties. Architecting ferroelectrics in the small scale holds interest in both application and fundamental research. Compared to their 2D counterparts – thin films, f ...

EPFL2010

Ferroelectric transistors with improved characteristics at high temperature

Mihai Adrian Ionescu, Nava Setter, Igor Stolichnov, Didier Bouvet, Livio Lattanzio, Giovanni Antonio Salvatore

We report on the temperature dependence of ferroelectric metal-oxide-semiconductor (MOS) transistors and explain the observed improved characteristics based on the dielectric response of ferroelectric materials close to the Curie temperature. The hystereti ...

American Institute of Physics2010

We demonstrate the importance of thermal effects such as temperature-induced electronic, magnetic and vibrational excitations, as well as structural defects in the first-principles calculations of the magnetic critical temperature of complex alloys using h ...

2009

Toward a low-voltage multiferroic transistor: Magnetic (Ga,Mn)As under ferroelectric control

Nava Setter, Igor Stolichnov, Harry Joseph Trodahl, Sebastian Riester

The persistent field effect control of ferromagnetism in a diluted magnetic semiconductor by low-voltage polarizing pulses is demonstrated in a ferroelectric gate field effect transistor configuration. The Curie temperature of the (Ga,Mn)As channel is unam ...

2009

Temperature-induced Phase Transitions in Micro-, Submicro-, and Nanocrystalline NaNbO3

Arnaud Magrez

Phase transitions in micro-, submicro-, and nanocrystalline NaNbO3 were investigated by temperature-tuning Raman spectroscopy and X-ray powder diffraction method. Three powders with different average particle size showed successive phase transitions within ...

2007

Predicted by the theory, ferromagnetism is expected in Co-doped ZnO. Recently, ferromagnetism above room temperature was reported in thin films as well as in bulk samples made of cobalt-doped zinc oxide. In this study, we report the preparation of ZnO dope ...

2006

A study was conducted on the effects of compositional modifications on the temperature coefficient of resonance frequency (TCF) in the disc planar vibration mode for the bismuth layer-structured compound SrBi2Nb2O9 (SBN)-based ceramics. The substitution of ...

2003

, ,

The orientation dependence of the longitudinal piezoelectric coefficient, d(33)(*), is investigated as a function of temperature in BaTiO3 and PbTiO3 crystals using the Landau-Ginsburg-Devonshire theory. We show that a presence of the ferroelectric-ferroel ...

2003