Silicon CMOS and InGaAs(P)/InP SPADs for NIR/SWIR detection
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The first implementation of a single photon avalanche diode (SPAD) is reported in 130nm CMOS technology. The SPAD is fabricated as p+/nwell junction with octagonal shape. Premature edge breakdown is prevented through a guard ring of p-well around the p+ an ...
Spie-Int Soc Optical Engineering, Po Box 10, Bellingham, Wa 98227-0010 Usa2007
A solid-state imager fabricated in CMOS technology is presented for depth information capture of arbitrary 3D objects with millimeter resolution. The system is based on an array of 32x32 pixels that independently measure the time-of-flight of a ray of ligh ...
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Most ionic crystals have strong reflection bands in the far infrared. Many such crystals are also transmissive to infrared radiation. An unstable resonator that exploits these properties is described. Preliminary results from a device 134 cm long and of 6 ...
Many biological tissues and a lot of technical objects of interest are to a certain degree transparent to light in the visible and near infrared wavelength range of the electromagnetic spectrum. Nevertheless, it has not been possible for a long time to cre ...
The first implementation of a single photon avalanche diode (SPAD) is reported in 130nm CMOS technology. The SPAD is fabricated as p+/nwell junction with octagonal shape. Premature edge breakdown is prevented through a guard ring of p-well around the p+ an ...
The design and characterization of an imaging system is presented for depth information capture of arbitrary three-dimensional (3-D) objects. The core of the system is an array of 32 × 32 rangefinding pixels that independently measure the time-of-flight of ...
