Publication
Direct high-temperature growth of GaN on Si using trimethylaluminum preflow enabling vertically-conducting heterostructures
Publications associées (32)
Font Side Solutions for c-Si Solar Cells with High-Temperature Passivating Contacts
In this work, we studied the potential of using thin films deposited by plasma-enhanced chemical vapor deposition (PECVD) for two main purposes: introducing an n-type passivating contact at the front of a TOPCon solar cell, or simplifying the fabrication o ...
EPFL2024Material Development for Perovskite/Silicon Tandem Photovoltaics
The developed world is built on the fact that energy is readily available and functionally infinite. The electricity from the wall, the gas at the station, and the heat in our homes are reliable and low-cost. But this comfort is so far only possible throug ...
EPFL2022Crystalline Order in Compound Semiconductors in Nanoscale Structures and Thin Films
Semiconductors materials and devices are essential building blocks for many of the technologies deeply embedded in modern life. Improving the performance of semiconductor devices requires a deeper understanding of the fundamental mechanisms controlling the ...
EPFL2021Development of Highly Efficient Perovskite-on-Silicon Tandem Solar Cells
Crystalline Silicon (c-Si) solar cells are dominating the photovoltaic (PV) market. Owing to their large manufacturing capacity, reliability and efficiency, c-Si solar cells are now cost-competitive with other non-renewable electricity sources in many plac ...
EPFL2020High performance Fully-vertical GaN-on-Si power MOSFETs
Elison de Nazareth Matioli, Chao Liu
We report the first demonstration of fully-vertical power MOSFETs on 6.6-μm-thick GaN grown on a 6-inch Si substrate by metal-organic chemical vapor deposition (MOCVD). A robust fabrication method was developed based on a selective and local removal of the ...
IEEE2019GaN-on-Si Quasi-Vertical Power MOSFETs
Elison de Nazareth Matioli, Riyaz Mohammed Abdul Khadar, Chao Liu
We demonstrate the first GaN vertical transistor on silicon, based on a 6.7-mu m-thick n-p-n heterostructure grown on 6-inch silicon substrate by metal organic chemical-vapor deposition. The devices consist of trench-gate quasi-vertical metal-oxide-semicon ...
2018Full-Area Passivating Contacts with High and Low Thermal Budgets: Solutions for High Efficiency c-Si Solar Cells
Today more than 90% of the global PV market is covered by c-Si solar cells which are limited by recombination losses at the metal-semiconductor interface. This recombination path can be avoided by separating the metal from the c-Si wafer by introducing a b ...
EPFL2018Interplay of annealing temperature and doping in hole selective rear contacts based on silicon-rich silicon-carbide thin films
Christophe Ballif, Franz-Josef Haug, Matthieu Despeisse, Monica Morales Masis, Gizem Nogay, Philipp Friedrich Hermann Löper, Philippe Wyss, Oscar Esteban Rucavado Leandro, Josua Andreas Stückelberger
We present a detailed optimization of a hole selective rear contact for p-type crystalline silicon solar cells which relies on full-area processes and provides full-area passivation. The passivating hole-contact is based on a layer stack comprising a chemi ...
Elsevier Science Bv2017Aluminium metallisation for interdigitated back-contact silicon heterojunction solar cells
Back-contact silicon heterojunction solar cells with an efficiency of 22% were manufactured, featuring a simple aluminium metallisation directly on the doped amorphous silicon films. Both the open-circuit voltage and the fill factor heavily depend on the p ...
Iop Publishing Ltd2017Temperature dependence of hydrogenated amorphous silicon solar cell performances
Christophe Ballif, Franz-Josef Haug, Michael Elias Stückelberger, Yannick Samuel Riesen
Thin-film hydrogenated amorphous silicon solar (a-Si:H) cells are known to have better temperature coefficients than crystalline silicon cells. To investigate whether a-Si:H cells that are optimized for standard conditions (STC) also have the highest energ ...
American Institute of Physics2016