Optical properties of In(Ga)As/GaAs quantum dot-based devices emitting at 1.3[mu]m
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By using chemical beam epitaxy at growth temperatures as low as 460-480 degrees C, we have overcome strain relaxation problems that prevented so far the successful use of InAsP quantum wells in 1.55 mu m lasers. Five quantum well InAsP/InGaAsP horizontal c ...
We report the first successful use, to our knowledge, of InAsP quantum wells for 1.55 mu m wavelength laser emission: 5 quantum well InAsP/InGaAsP horizontal cavity lasers showed 88% internal efficiency, 1.6 cm(-1) losses per well, and 33 A/cm(2) transpare ...
We present second-harmonic generation experiments in p-doped asymmetrically stepped quantum wells using the emission of a free-electron laser in the wavelength interval between 13 and 18 mu m. The wells are designed such that the three fewest valence-subba ...
We present a comparative study of time-integrated four-wave-mixing and femtosecond emission under resonant excitation on excitons in weakly disordered GaAs quantum wells. At highest exciton densities when dephasing dominates the spectral width (homogeneous ...
High quality InP/InGaAsP Distributed Bragg Reflectors (DBRs) are a key element in Vertical Cavity Surface Emitting Laser (VCSELs) for long wavelength (1.55 mu m) applications [1-3]. Because of the small index difference between InP and InGaAsP, more than 3 ...
The Zn/Se flux ratio employed during the early stages of molecular beam epitaxy of pseudomorphic ZnSe/GaAs(001) as well as lattice-matched ZnSe/In0.04Ga0.96As(001) heterostructures controls the density of the native stacking faults, which have been associa ...
We report transient sub-picosecond pump and probe experiments performed on a semiconductor microcavity into which quantum wells have been inserted. The cavity is featuring resonance and strong coupling with the exciton. It is strongly and resonantly excite ...
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We develop a quantum mechanical model for the interaction of excitons in a microcavity embedded quantum well with a short resonant laser pulse. The model assumes full in-plane coherence. A Gaussian distribution of exciton slates is included in order to tak ...
Microgun-pumped blue lasers with lasing thresholds in the 4-20 kW/cm(2) range for temperatures between 83 and 225 K were fabricated by molecular beam epitaxy. The devices exploit graded index, separate confinement Zn1-xCdxSe/ZnSe heterostructures and use a ...
