The design, fabrication and characterization of CMOS-compatible optoelectronic devices is discussed. All devices are fabricated on silicon on insulator (SOI) substrates which makes them suitable for three-dimensional (3-D) telecommunication photonic integrated circuits. A 5 MHz bandwidth for 2×2 switch and a thermal compensation principle for modulators is demonstrated.
Fabrizio Carbone, Giovanni Maria Vanacore, Ivan Madan, Ido Kaminer, Simone Gargiulo, Ebrahim Karimi
Tobias Kippenberg, Aleksandr Tusnin, Kenichi Komagata, Alexey Tikan