Publication
The fabrication and characterization of site-controlled InGaAs/GaAs quantum dots (QDs) made by MOVPE using triethylgallium (TEGa) on patterned {111}B GaAs substrates are reported. Results are compared to more traditional pyramidal QD structures grown employing trimethylgallium (TMGa). Several potential advantages of the use of TEGa are demonstrated, including more reproducible achievement of QD transitions with narrow (< 100 mu eV) linewidths and better spectral uniformity across patterned substrates. These features are important for QD integration in optical cavities, which require both site and spectral stringent control. (C) 2014 Elsevier B.V. All rights reserved.