Publications associées à Implementing Ultra-high-Value Floating Tunable CMOS Resistors

LiNiO Junction Gate for High-performance Enhancement-mode GaN Power Transistor

GaN metal-oxide-semiconductor high electron mobility transistors (MOS)HEMTs) offer outstanding properties for next-generation power electronics devices. The high conductivity, high voltage blocking capability, high operation frequency, and device-level int ...

EPFL2022

Heterostructure design and field management in III-N high-electron mobility electronic devices

Catherine Erine

III-N family of materials has offered multiple groundbreaking technologies in the field of optoelectronics and high-power radio-frequency (RF) devices. Blue light-emitting diodes (LEDs) have revolutionized low-energy lighting. Gallium nitride (GaN) RF mark ...

EPFL2021

Graphene Negative Differential Resistance Circuit With Voltage-Tunable High Performance at Room Temperature

Mihai Adrian Ionescu, Arnaud Magrez, Antonios Bazigos, Laurent Syavoch Bernard, Pankaj Sharma

We propose, fabricate, and experimentally demonstrate a circuit based on graphene field-effect transistors (GFETs) showing enhanced negative differential resistance (NDR) characteristics at room temperature. The proposed graphene NDR (GNDR) circuit consist ...

Institute of Electrical and Electronics Engineers2015

Tunable floating active inductor with internal offset reduction

Maher Kayal, Sidi-Rachid Cherkaoui, François Krummenacher, Marc Pastre, Laurent Fabre, Ira Nagel

Presented is a transistor-level implementation of a floating and tunable CMOS active inductor. It is based on the classical gyrator-C topology and is enhanced by adding an internal offset reduction mechanism to guarantee functionality also for unbalanced D ...

2012