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Time-of-flight secondary ion mass spectrometry (ToF-SIMS) imaging is employed to characterize the surface of patterned noble metal (Pt) and titania (TiO2) thin films deposited on oxidized silicon wafers. ToF-SIMS is used to follow the different process steps during the thin films patterning as well as the post-processing cleaning. Both positive and negative ToF-SIMS modes reveal the presence of contaminants, due to the etching processes (Cl- Al-,(+)), but only on the etched surfaces. Elements due to the post-processing cleaning (K+, Na+, Pb+) and photoresist residues are also detected but on the entire wafer surface. The utility of these chemically well-defined titania/platinum patterns is demonstrated for the,selective adsorption of phosphonic acid derivatives. Typical fragments of phosphonic acid groups, i.e. PO2- and PO3- show their preferential adsorption on TiO2. (C) 2002 Elsevier Science B.V. All rights reserved.
Julia Schmale, Ivo Fabio Beck, Benjamin Jérémy Laurent Heutte, Imad El Haddad, Jakob Boyd Pernov, Hélène Paule Angot, Lubna Dada
Aïcha Hessler-Wyser, Johann Michler, Amit Sharma, Caroline Hain, Daniele Casari, Thomas Nelis