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Physical model of retention and temperature-dependent polarization reversal in ferroelectric films

Publications associées (53)

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Actuation of piezoelectric structures with ferroelectric thin films having multiple elements

Paul Muralt

A method for driving piezoelectric elements of a micro-system. The piezoelectric elements comprising a ferroelectric thin film, and being configured to be part of any one or a combination of items of a list comprising: a cantilever, a bridge, a diaphragm, ...

2020

Interface-Dominated Time-Dependent Behavior of Poled Poly(Vinylidene Fluoride–Trifluoroethylene)/Barium Titanate Composites

Véronique Michaud, Yves Leterrier, Dragan Damjanovic, Sara Dalle Vacche

Composites in which particles of ferroelectric ceramic phase are randomly dispersed in a polymeric matrix are of interest because of flexibility, conformability, and ease of processing. However, their piezoelectric properties are rather low, unless very hi ...

2020

, , ,

This correspondence highlights that the Gibbs free energy description of a ferroelectric capacitor in series with a paraelectric capacitor, depends on the initial charge on the plates of the ferroelectric capacitor. An incomplete Gibbs free energy descript ...

2020

Intrinsic or nucleation-driven switching: An insight from nanoscopic analysis of negative capacitance Hf1-xZrxO2-based structures

Mihai Adrian Ionescu, Igor Stolichnov, Matteo Cavalieri, Carlotta Gastaldi

HfO2-based ferroelectrics have dramatically changed the application perspectives of polarization-switching materials for information processing and storage. Their CMOS compatibility and preservation of high reversible polarization down to a few nanometer t ...

AMER INST PHYSICS2020

Experimental Details of a Steep-Slope Ferroelectric InGaAs Tunnel-FET With High-Quality PZT and Modeling Insights in the Transient Polarization

Mihai Adrian Ionescu, Igor Stolichnov, Ali Saeidi, Hiroshi Iwai

The steep-slope ferroelectric tunnel-FET (SS-FeTFET), consisting of an InGaAs TFET with a sub-60 mV/dec subthreshold swing (SS) at room temperature and an externally connected high-quality single-crystalline PZT capacitor, displays improved SS compared to ...

2019

, , ,

Impact of physical parameters of ferroelectric layer on the performance of Negative Capacitance (NC) MOSFETs is experimentally studied in this paper. Electrical behaviors of PZT-based and Si:HfO2-based NC-FETs are investigated and discussed. In a PZT-based ...

2018

Stabilization of ferroelectric HfxZr1-xO2 films using a millisecond flash lamp annealing technique

Eamon Patrick O'Connor, Stefan Abel

We report on the stabilization of ferroelectric HfxZr1-xO2 (HZO) films crystallized using a low thermal budget millisecond flash lamp annealing technique. Utilizing a 120 s 375 degrees C preheat step combined with millisecond flash lamp pulses, ferroelectr ...

AMER INST PHYSICS2018

Nonlinear dynamics of polar regions in paraelectric phase of (Ba1-x,Srx)TiO3 ceramics

Dragan Damjanovic

The dynamic dielectric nonlinearity of barium strontium titanate (Ba1-x, Sr-x) TiO3 ceramics is investigated in their paraelectric phase. With the goal to contribute to the identification of the mechanisms that govern the dielectric nonlinearity in this fa ...

American Institute of Physics2017

The expressions for the spontaneous polar contribution delta n (i) (s) to the principal values of the refractive index due to the quadratic electro-optic effect in ferroelectrics have been considered within the phenomenological approach taking into account ...

Maik Nauka/Interperiodica/Springer2016

Ferroelectric switching in circular and ring capacitors has been performed using a stroboscopic mode of piezoresponse force microscopy. A simple geometric model incorporating the characteristic domain wall motion is sufficient to describe the switching of ...

Taylor & Francis2015