Substrate heating method for coating metal surfaces with high-silica zeolites: ZSM-5 coatings on stainless steel plates
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GaAs/AlxGa1-xAs multiple-quantum-well (MQW) structures with identical well thicknesses but with different Al contents x in the barrier (x almost-equal-to 0.1, 0.2, 0.45, and 1) were grown by molecular-beam epitaxy to study the impurity-induced disordering ...
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We report on the epitaxial growth of high quality GaN films on Si(111) substrates by molecular beam epitaxy using ammonia. The surface morphology and crystallinity of thick undoped GaN films are characterized by reflection high-energy electron diffraction ...
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The electron-releasing ability of certain carbonyls is exploited in the chemistry of the ''naked sugars'' which allows the stereoselective synthesis of rare sugars, C-nucleosides, C-glycosides and a variety of disaccharide mimetics. ...
THE similarity of many patterns formed in non-equilibrium growth processes in physics, chemistry and biology is conspicuous, and many attempts have been made to discover common mechanisms underlying their formation(1). A central question is what causes som ...
Pb1-xCaxTiO3 thin films with x = 0-0.3 for pyroelectric applications were deposited on platinized silicon wafers by chemical solution processing. Ca-substitution for Pb in PbTio(3) results in a reduced cia ratio of the unit cell, which, in turn, leads to b ...
Characterization of impurety diffusion induced disordering in GaAs/AlGaAs multiquantum well structures, grown by molecular beam epitaxy, has been carried out by scanning electron microscopy. ...
Cement pastes were cured at 80°C and examined by scanning electron microscopy, X-ray microanalysis and X-ray diffraction immediately or after storage in water for various periods at 20°C. Ettringite began to form a few days after the heat treatment, as ver ...
