Electron Beam Lithography: Proximity Effect Corrections

This lecture covers proximity effect corrections in electron beam lithography, focusing on adjusting dose uniformly for small patterns, pixel per pixel dose correction for large features, and the importance of a beam point spread function model. The instructor discusses the double Gaussian approximation for forward and backscattering, experimental approaches using nested patterns and dose sweeps, and the base dose for negative and positive resists. The lecture also addresses the impact of parameters like acceleration voltage and resist thickness on proximity effects, emphasizing the need for convenient metrology in micro and nanofabrication.