CMOS Inverter Fabrication

This lecture covers the fabrication process of a CMOS inverter, starting with the creation of the n-well and the definition of the p-MOSFET and n-MOSFET. It then explains the steps for defining the polysilicon gate, pt diffusion, nt diffusion, contact holes, and metall connections. The lecture also delves into the thermal oxidation and doping processes involved in creating controlled conductivity zones. It further explores the techniques of diffusion and ion implantation, emphasizing their importance in modern CMOS fabrication processes. The lecture concludes with an overview of transferring patterns to the wafer surface, including the types of photoresists and printing methods used in the process.