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This lecture covers field mapping of semiconductor specimens using off-axis electron holography and diffraction-based techniques. It explores the challenges in measuring potentials and fields in modern semiconductor devices, the importance of good specimen preparation, and the development of techniques like Differential Phase Contrast STEM and 4D STEM for electromagnetic field measurements. The instructor discusses the basics of off-axis electron holography, the control of dopants in semiconductor devices, and the strain mapping in semiconductor materials. Various methods for measuring potentials and fields by transmission electron microscopy are compared and analyzed.