Are you an EPFL student looking for a semester project?
Work with us on data science and visualisation projects, and deploy your project as an app on top of Graph Search.
Publication
Are you an EPFL student looking for a semester project?
Work with us on data science and visualisation projects, and deploy your project as an app on top of Graph Search.
This paper reports on the fabrication and electrical characterization of a novel pressure sensor based on a suspended-gate MOSFET (SG-MOSFET) using a new polyimide process. The device is composed of a SG-MOSFET built on a thin SOI membrane released by a backside silicon wafer etching. The membrane deflection induced by the backside-applied pressure (up to 250 kPa) is detected by the variation of the MOSFET drain current. Device behavior simulations and optimized fabrication process flow are presented as well as the first electrical characterization of the SG-MOSFET.
Elison de Nazareth Matioli, Alessandro Floriduz, Riyaz Mohammed Abdul Khadar, Chao Liu