Publication
We demonstrated a waveguide crossing for submicron silicon waveguides with average insertion loss of 0.18±0.03 dB and crosstalk of -41±2 dB, uniform across an 8-inch wafer. The device was fabricated in a CMOS-compatible process using 248 nm lithography, with only one patterning step.
Toralf Scharf, Wilfried Noell, Chen Yan, Raoul Kirner, Andreas Vetter
Hans Peter Herzig, Toralf Scharf, Wilfried Noell, Raoul Kirner, Johana Bernasconi