Saturation velocity

Saturation velocity is the maximum velocity a charge carrier in a semiconductor, generally an electron, attains in the presence of very high electric fields. When this happens, the semiconductor is said to be in a state of velocity saturation. Charge carriers normally move at an average drift speed proportional to the electric field strength they experience temporally. The proportionality constant is known as mobility of the carrier, which is a material property. A good conductor would have a high mobility value for its charge carrier, which means higher velocity, and consequently higher current values for a given electric field strength. There is a limit though to this process and at some high field value, a charge carrier can not move any faster, having reached its saturation velocity, due to mechanisms that eventually limit the movement of the carriers in the material. As the applied electric field increases from that point, the carrier velocity no longer increases because the carriers lose energy through increased levels of interaction with the lattice, by emitting phonons and even photons as soon as the carrier energy is large enough to do so. Saturation velocity is a very important parameter in the design of semiconductor devices, especially field effect transistors, which are basic building blocks of almost all modern integrated circuits. Typical values of saturation velocity may vary greatly for different materials, for example for Si it is in the order of 1×107 cm/s, for GaAs 1.2×107 cm/s, while for 6H-SiC, it is near 2×107 cm/s. Typical electric field strengths at which carrier velocity saturates is usually on the order of 10-100 kV/cm. Both saturation field and the saturation velocity of a semiconductor material are typically strong function of impurities, crystal defects and temperature. For extremely small scale devices, where the high-field regions may be comparable or smaller than the average mean free path of the charge carrier, one can observe velocity overshoot, or hot electron effects which has become more important as the transistor geometries continually decrease to enable design of faster, larger and more dense integrated circuits.

High-Temperature HEMT Mode

Farzan Jazaeri, Nika Sahebghalam

Taking into account the impact of self-heating and temperature rise effects, this work presents a physics-based analytical model for HEMTs, operating continuously from room temperature to high temperatures in linear and saturation regimes. Relying on the c ...

IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC2022

Correlation between conduction velocity and frequency analysis in patients with atrial fibrillation using high-density charge mapping

Jean-Marc Vesin, Lam Dang

Spectral analysis of atrial signals has been used to identify regions of interest in atrial fibrillation (AF). However, the relationship to the atrial substrate is unclear. In this study, we compare regions with dominant frequency (DF), simultaneously dete ...

SPRINGER HEIDELBERG2022

High-Temperature HEMT Mode

Correlation between conduction velocity and frequency analysis in patients with atrial fibrillation using high-density charge mapping

Enhancement Mode Tri-gate GaN Power Devices and Logic Circuits

Correlation between conduction velocity and frequency analysis in patients with atrial fibrillation using high-density charge mapping

Enhancement Mode Tri-gate GaN Power Devices and Logic Circuits

High-Temperature HEMT Mode