Farzan JazaeriFarzan Jazaeri received his M.Sc. degree in 2009 from University of Tehran and his Ph.D. in electronic engineering from EPFL in 2015. He has been serving as Research Scientist at EPFL since 2015 and Senior RD Semiconductor Device Engineer in the Swatch Company since 2019.He is a recipient of the 2018 Electron Devices Society George E. Smith Award, the best talk award from MIXDES 2019 and the best paper awards from ESSDERC2018 and ESSDERC2019, and several other academic awards. He is also awarded an advanced Swiss National Science Foundation grant for two years fellowship in MIT and NASA. His doctoral thesis was recognized to be eligible for the IBM award in 2017. Dr. Jazaeri is currently research scientist and project leader in high level of international scientific collaborative activities at EPFL. His research activities on solid-state physics are focused on creation of the cryogenic temperature infrastructure necessary to operate the qubits for quantum computations(MOSQUITO), radiation-induced damages in advanced devices for the future high energy physics experiments at CERN (GigaRadMOST), Pinned Photodiodes for CIS, and modeling and characterization AlGaN-GaN heterostructure in collaboration with IMEC. Together with Dr. Sallese, he is the lead developer of EPFL HEMT MODEL for GaN HEMTs. He fully developed a new model (EPFL-JL Model) for the so-called nanowire FETs and was invited by Cambridge University Press to write a book on junctionless nanowire FETs, emerging nanoelectronic devices, already published since 2018. He serves as lead editor and reviewer for several scientific journals. He has been an invited keynote speaker at several international conferences and events. He is invited to MIXDES 2019 as a keynote speaker to address quantum bits and quantum computing architecture.From Jun 2009 to February 2010, he worked on designing and implementing SD/HD broadcast systems with SAMIM-RAYANEH Co., Tehran, Iran. Between March 2010 and November 2011 he worked as a SCADA expert in Tehran Regional Electric Co. (TREC), Tehran, Iran. From September 2010 to December 2011, he continued his research activities in nano-electronics in Tehran, Iran. In December 2011, he joined to Electron Device Modelling and Technology Lab (EDLab) and pursued his Ph.D. degree at EPFL. In 2015, he received his Ph.D. from Microsystems and Microelectronics department, Integrated Systems Laboratory (STI/IC) at EPFL, Lausanne, Switzerland.
Drazen DujicDrazen Dujic is an Associate Professor and Head of the Power Electronics Laboratory at EPFL. He received the Dipl.Ing. and MSc degrees from the University of Novi Sad, Serbia in 2002 and 2005, respectively, and the PhD degree from Liverpool John Moores University, UK in 2008. From 2003 to 2006, he was a Research Assistant with the Faculty of Technical Sciences at University of Novi Sad. From 2006 to 2009, he was a Research Associate with Liverpool John Moores University. After that he moved to industry and joined ABB Switzerland Ltd, where from 2009 to 2013, he was Scientist and then Principal Scientist with ABB Corporate Research Center in Baden-Dättwil, and from 2013 to 2014 he was R&D Platform Manager with ABB Medium Voltage Drives in Turgi. He joined EPFL in 2014 as Tenure Track Assistant Professor and was promoted to Associate Professor in 2021. His research interests include the areas of design and control of advanced high power electronic systems and high-performance drives, predominantly for the medium voltage applications related to electrical energy generation, conversion and storage. He has authored or coauthored more than 150 scientific publications and has filed 16 patents. In 2018 he received EPE Outstanding Service Award from European Power Electronics and Drives Association and in 2014 the Isao Takahashi Power Electronics Award for Outstanding Achievement in Power Electronics. He is Senior Member of IEEE, and serves as Associate Editor for IEEE Transactions on Power Electronics, IEEE Transactions on Industrial Electronics and IET Electric Power Applications. He is Chairman of the Swiss IEEE Power Electronics Society (PELS) Chapter and IEEE PELS R8 Chair.
